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| عکس | شماره قطعه تولیدکننده | موجودی | تعداد | برگه مشخصات | سری | بسته / کیس | بسته بندی | وضعیت محصول | نوع FET | تکنولوژی | تخلیه به ولتاژ منبع (Vdss) | جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد | ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن) | Rds روشن (حداکثر) @ ID، Vgs | Vgs(th) (Max) @ ID | شارژ دروازه (Qg) (حداکثر) @ Vgs | Vgs (حداکثر) | ظرفیت ورودی (Ciss) (حداکثر) @ Vds | ویژگی FET | اتلاف نیرو (حداکثر) | دمای عملیاتی | درجه | صلاحیت | نوع نصب | بسته دستگاه تامین کننده |
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IRFR1018ETRMOSFET N-CH 60V 56A DPAK |
6,449 |
|
برگه مشخصات |
* | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | - | ±20V | - | - | 110W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) | |
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TN0610N3-G-P003MOSFET N-CH 100V 500MA TO92-3 |
3,349 |
|
برگه مشخصات |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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TN0610N3-G-P013MOSFET N-CH 100V 500MA TO92-3 |
3,397 |
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برگه مشخصات |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
IPB065N06L GMOSFET N-CH 60V 80A TO263-3 |
4,940 |
|
برگه مشخصات |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 6.2mOhm @ 80A, 10V | 2V @ 180µA | 157 nC @ 10 V | ±20V | 5100 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRF640LMOSFET N-CH 200V 18A I2PAK |
4,507 |
|
برگه مشخصات |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
MTP36N06VMOSFET N-CH 60V 32A TO220AB |
5,718 |
|
برگه مشخصات |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
IRLR3303TRMOSFET N-CH 30V 35A DPAK |
5,070 |
|
برگه مشخصات |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
PJP10NA80_T0_00001800V N-CHANNEL MOSFET |
6,194 |
|
- |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Ta) | 10V | 1.15Ohm @ 5A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1517 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
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PJP9NA90_T0_00001900V N-CHANNEL MOSFET |
5,762 |
|
- |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 9A (Ta) | 10V | 1.4Ohm @ 4.5A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1634 pF @ 25 V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
HUFA75639S3SMOSFET N-CH 100V 56A D2PAK |
8,227 |
|
- |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
|
|
HUFA75339S3SMOSFET N-CH 55V 75A D2PAK |
5,849 |
|
برگه مشخصات |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
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HUFA76439S3SMOSFET N-CH 60V 75A D2PAK |
2,565 |
|
برگه مشخصات |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 12mOhm @ 75A, 10V | 3V @ 250µA | 84 nC @ 10 V | ±16V | 2745 pF @ 25 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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DMTH83M2SPSW-13MOSFET BVDSS: 61V~100V POWERDI50 |
9,278 |
|
برگه مشخصات |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 165A (Tc) | 6V, 10V | 2.9mOhm @ 30A, 10V | 4V @ 250µA | 87 nC @ 10 V | ±20V | 5466 pF @ 40 V | - | 4.1W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) |
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IRL3715STRLMOSFET N-CH 20V 54A D2PAK |
4,698 |
|
برگه مشخصات |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17 nC @ 4.5 V | ±20V | 1060 pF @ 10 V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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DMTH6004LPSWQ-13MOSFET BVDSS: 41V~60V POWERDI506 |
9,655 |
|
برگه مشخصات |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 3V @ 250µA | 78.3 nC @ 10 V | ±20V | 5399 pF @ 30 V | - | 2.6W (Ta), 138W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) |
|
|
IQE018N06NM6CGATMA1TRENCH 40<-<100V |
8,182 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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IQE018N06NM6ATMA1TRENCH 40<-<100V |
9,946 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFBF20PBF-BE3MOSFET N-CH 900V 1.7A TO220AB |
7,183 |
|
برگه مشخصات |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | - | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF3315LPBFMOSFET N-CH 150V 21A TO262 |
4,078 |
|
برگه مشخصات |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
STL24N65M2MOSFET N-CH 650V 14A PWRFLAT HV |
4,843 |
|
- |
MDmesh™ M2 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 250mOhm @ 7A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±25V | 1060 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
