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FET، ماسفت

عکس شماره قطعه تولیدکننده موجودی قیمت تعداد برگه مشخصات سری بسته / کیس بسته بندی وضعیت محصول نوع FET تکنولوژی تخلیه به ولتاژ منبع (Vdss) جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن) Rds روشن (حداکثر) @ ID، Vgs Vgs(th) (Max) @ ID شارژ دروازه (Qg) (حداکثر) @ Vgs Vgs (حداکثر) ظرفیت ورودی (Ciss) (حداکثر) @ Vds ویژگی FET اتلاف نیرو (حداکثر) دمای عملیاتی درجه صلاحیت نوع نصب بسته دستگاه تامین کننده
STL100N1VH5

STL100N1VH5

MOSFET N-CH 12V 100A POWERFLAT

STMicroelectronics

4,878
RFQ
STL100N1VH5

برگه مشخصات

STripFET™ V 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 100A (Tc) 2.5V, 4.5V 3mOhm @ 12.5A, 4.5V 500mV @ 250µA (Min) 26.5 nC @ 4.5 V ±8V 2085 pF @ 10 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (5x6)
SIHP35N60E-GE3

SIHP35N60E-GE3

MOSFET N-CH 600V 32A TO220AB

Vishay Siliconix

9,889
RFQ
SIHP35N60E-GE3

برگه مشخصات

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHB30N60E-E3

SIHB30N60E-E3

MOSFET N-CH 600V 29A D2PAK

Vishay Siliconix

8,811
RFQ
SIHB30N60E-E3

برگه مشخصات

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
MCTL1D4N10YH-TP

MCTL1D4N10YH-TP

N-CHANNEL MOSFET,TOLL-8L

Micro Commercial Co

4,389
RFQ

-

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 10V 1.4mOhm @ 50A, 10V 4.5V @ 250µA 152 nC @ 10 V ±20V 10768 pF @ 50 V - 297W -55°C ~ 150°C (TJ) - - Surface Mount TOLL-8L
IRF3515L

IRF3515L

MOSFET N-CH 150V 41A TO262

Infineon Technologies

9,513
RFQ
IRF3515L

برگه مشخصات

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IXTH50N25T

IXTH50N25T

MOSFET N-CH 250V 50A TO247

IXYS

8,399
RFQ
IXTH50N25T

برگه مشخصات

Trench TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 4000 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
IRFS750A

IRFS750A

MOSFET N-CH 400V 8.4A TO220F

onsemi

3,455
RFQ
IRFS750A

برگه مشخصات

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 8.4A (Tc) 10V 300mOhm @ 4.2A, 10V 4V @ 250µA 131 nC @ 10 V ±30V 2780 pF @ 25 V - 49W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
NVMFS6B03NLWFT1G

NVMFS6B03NLWFT1G

MOSFET N-CH 100V 20A 5DFN

onsemi

6,080
RFQ
NVMFS6B03NLWFT1G

برگه مشخصات

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 145A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 3V @ 250µA 9.4 nC @ 10 V ±16V 5320 pF @ 25 V - 3.9W (Ta), 198W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
IPC302N10N3X1SA1

IPC302N10N3X1SA1

MOSFET N-CH 100V 1A SAWN ON FOIL

Infineon Technologies

2,034
RFQ
IPC302N10N3X1SA1

برگه مشخصات

OptiMOS™ Die Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Tj) 10V 100mOhm @ 2A, 10V 3.5V @ 302µA - - - - - - - - Surface Mount Sawn on foil
AOB42S60L

AOB42S60L

MOSFET N-CH 600V 37A TO263

Alpha & Omega Semiconductor Inc.

5,929
RFQ
AOB42S60L

برگه مشخصات

aMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 109mOhm @ 21A, 10V 3.8V @ 250µA 40 nC @ 10 V ±30V 2154 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF840S

IRF840S

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

5,546
RFQ
IRF840S

برگه مشخصات

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF840STRL

IRF840STRL

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

7,944
RFQ
IRF840STRL

برگه مشخصات

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFBE30L

IRFBE30L

MOSFET N-CH 800V 4.1A I2PAK

Vishay Siliconix

5,081
RFQ

-

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
R5016ANX

R5016ANX

MOSFET N-CH 500V 16A TO220FM

Rohm Semiconductor

7,574
RFQ
R5016ANX

برگه مشخصات

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 270mOhm @ 8A, 10V 4.5V @ 1mA 50 nC @ 10 V ±30V 1800 pF @ 25 V - 77W (Tc) 150°C (TJ) - - Through Hole TO-220FM
NVMFS6B03NT1G

NVMFS6B03NT1G

MOSFET N-CH 100V 132A 5DFN

onsemi

4,628
RFQ
NVMFS6B03NT1G

برگه مشخصات

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 145A (Tc) 10V 4.8mOhm @ 20A, 10V 4V @ 250µA 58 nC @ 10 V ±16V 4200 pF @ 50 V - 3.9W (Ta), 198W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
STH245N75F3-6

STH245N75F3-6

MOSFET N-CH 75V 180A H2PAK-6

STMicroelectronics

6,417
RFQ
STH245N75F3-6

برگه مشخصات

STripFET™ F3 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) 10V 3mOhm @ 90A, 10V 4V @ 250µA 87 nC @ 10 V ±20V 6800 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-6
FDI045N10A

FDI045N10A

MOSFET N-CH 100V 120A I2PAK

onsemi

8,202
RFQ
FDI045N10A

برگه مشخصات

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 100A, 10V 4V @ 250µA 74 nC @ 10 V ±20V 5270 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
STW11NB80

STW11NB80

MOSFET N-CH 800V 11A TO247-3

STMicroelectronics

3,761
RFQ
STW11NB80

برگه مشخصات

PowerMESH™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 800mOhm @ 5.5A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 2900 pF @ 25 V - 190W (Tc) 150°C (TJ) - - Through Hole TO-247-3
STP20NM60A

STP20NM60A

MOSFET N-CH 650V 20A TO220AB

STMicroelectronics

8,197
RFQ
STP20NM60A

برگه مشخصات

MDmesh™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 290mOhm @ 10A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 1630 pF @ 25 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
STW13NK80Z

STW13NK80Z

MOSFET N-CH 800V 12A TO247-3

STMicroelectronics

3,703
RFQ
STW13NK80Z

برگه مشخصات

SuperMESH™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 650mOhm @ 6A, 10V 4.5V @ 100µA 155 nC @ 10 V ±30V 3480 pF @ 25 V - 230W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3

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