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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
IXFT30N60P MOSFET N-CH 600V 30A TO268 IXYS	3,599	-	RFQ	برگه مشخصات	HiPerFET™, Polar	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	240mOhm @ 15A, 10V	5V @ 4mA	82 nC @ 10 V	±30V	4000 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
BUK764R2-80E,118 MOSFET N-CH 80V 120A D2PAK Nexperia USA Inc.	3,247	-	RFQ	برگه مشخصات	TrenchMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	10V	4.2mOhm @ 25A, 10V	4V @ 1mA	136 nC @ 10 V	±20V	10426 pF @ 25 V	-	324W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK
IXTH26N60P MOSFET N-CH 600V 26A TO247 Littelfuse Inc.	3,440	-	RFQ	برگه مشخصات	Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	26A (Tc)	10V	270mOhm @ 500mA, 10V	5V @ 250µA	72 nC @ 10 V	±30V	4150 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFP18N60X MOSFET N-CH 600V 18A TO220AB IXYS	5,459	-	RFQ	برگه مشخصات	HiPerFET™, Ultra X	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	230mOhm @ 9A, 10V	4.5V @ 1.5mA	35 nC @ 10 V	±30V	1440 pF @ 25 V	-	320W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
STB15NM65N MOSFET N-CH 650V 12A D2PAK STMicroelectronics	6,976	-	RFQ	برگه مشخصات	MDmesh™ II	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	270mOhm @ 7.75A, 10V	4V @ 250µA	55 nC @ 10 V	±25V	1900 pF @ 50 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK
STH130N10F3-2 MOSFET N-CH 100V 120A H2PAK-2 STMicroelectronics	8,501	-	RFQ	برگه مشخصات	STripFET™ III	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	9.3mOhm @ 60A, 10V	4V @ 250µA	57 nC @ 10 V	±20V	3305 pF @ 25 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	H2PAK-2
IRFBC40LC MOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix	3,581	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Tc)	10V	1.2Ohm @ 3.7A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IXTH2R4N120P MOSFET N-CH 1200V 2.4A TO247 Littelfuse Inc.	6,399	-	RFQ	برگه مشخصات	Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	2.4A (Tc)	10V	7.5Ohm @ 500mA, 10V	4.5V @ 250µA	37 nC @ 10 V	±20V	1207 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IRF644STRLPBF MOSFET N-CH 250V 14A D2PAK Vishay Siliconix	3,253	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	250 V	14A (Tc)	10V	280mOhm @ 8.4A, 10V	4V @ 250µA	68 nC @ 10 V	±20V	1300 pF @ 25 V	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IXFQ30N60X MOSFET N-CH 600V 30A TO3P IXYS	3,071	-	RFQ	برگه مشخصات	HiPerFET™, Ultra X	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	155mOhm @ 15A, 10V	4.5V @ 4mA	56 nC @ 10 V	±30V	2270 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
IXTQ120N15P MOSFET N-CH 150V 120A TO3P Littelfuse Inc.	3,595	-	RFQ	برگه مشخصات	Polar	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	120A (Tc)	10V	16mOhm @ 500mA, 10V	5V @ 250µA	150 nC @ 10 V	±20V	4900 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3P
IXTQ140N10P MOSFET N-CH 100V 140A TO3P Littelfuse Inc.	6,762	-	RFQ	برگه مشخصات	Polar	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	140A (Tc)	10V	11mOhm @ 70A, 10V	5V @ 250µA	155 nC @ 10 V	±20V	4700 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3P
STB16N65M5 MOSFET N-CH 650V 12A D2PAK STMicroelectronics	5,025	-	RFQ	برگه مشخصات	MDmesh™ V	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	299mOhm @ 6A, 10V	5V @ 250µA	31 nC @ 10 V	±25V	1250 pF @ 100 V	-	90W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
STW29NK50Z MOSFET N-CH 500V 31A TO247-3 STMicroelectronics	2,840	-	RFQ	برگه مشخصات	SuperMESH™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	31A (Tc)	10V	130mOhm @ 15.5A, 10V	4.5V @ 150µA	266 nC @ 10 V	±30V	6110 pF @ 25 V	-	350W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
BUK762R4-60E,118 MOSFET N-CH 60V 120A D2PAK Nexperia USA Inc.	5,126	-	RFQ	برگه مشخصات	TrenchMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	2.4mOhm @ 25A, 10V	4V @ 1mA	158 nC @ 10 V	±20V	11180 pF @ 25 V	-	357W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK
IPB120N06S4H1ATMA2 MOSFET N-CH 60V 120A TO263-3 Infineon Technologies	7,111	-	RFQ	برگه مشخصات	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	2.4mOhm @ 100A, 10V	4V @ 200µA	270 nC @ 10 V	±20V	21900 pF @ 25 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-3-2
IXFA18N60X MOSFET N-CH 600V 18A TO263AA IXYS	2,177	-	RFQ	برگه مشخصات	HiPerFET™, Ultra X	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	230mOhm @ 9A, 10V	4.5V @ 1.5mA	35 nC @ 10 V	±30V	1440 pF @ 25 V	-	320W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA (IXFA)
IXTQ69N30PM MOSFET N-CH 300V 25A TO3PFP Littelfuse Inc.	3,552	-	RFQ	برگه مشخصات	Polar	TO-3P-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	25A (Tc)	10V	49mOhm @ 34.5A, 10V	5V @ 250µA	156 nC @ 10 V	±20V	4960 pF @ 25 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3PFP
GS-065-008-1-L-MR GS-065-008-1-L-MR Infineon Technologies Canada Inc.	9,231	-	RFQ	-	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	8A (Tc)	6V	225mOhm @ 2.2A, 6V	1.4V @ 1.74mA	1.5 nC @ 6 V	+7V, -10V	52 pF @ 400 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	8-PDFN (5x6)
IXFP270N06T3 MOSFET N-CH 60V 270A TO220AB IXYS	9,500	-	RFQ	برگه مشخصات	HiperFET™, TrenchT3™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	270A (Tc)	10V	3.1mOhm @ 100A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	12600 pF @ 25 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3