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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
STB31N65M5 MOSFET N-CH 650V 22A D2PAK STMicroelectronics	9,068	-	RFQ	برگه مشخصات	MDmesh™ V	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	148mOhm @ 11A, 10V	5V @ 250µA	45 nC @ 10 V	±25V	1865 pF @ 100 V	-	150W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
2SK3318 MOSFET N-CH 600V 15A TOP-3F-A1 Panasonic Electronic Components	5,908	-	RFQ	برگه مشخصات	-	TOP-3F	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	460mOhm @ 7.5A, 10V	4V @ 1mA	-	±30V	3500 pF @ 20 V	-	3W (Ta), 100W (Tc)	150°C (TJ)	-	-	Through Hole	TOP-3F-A1
IRFPF30 MOSFET N-CH 900V 3.6A TO247-3 Vishay Siliconix	8,337	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	3.6A (Tc)	10V	3.7Ohm @ 2.2A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IXTA02N250 MOSFET N-CH 2500V 200MA TO263 IXYS	5,962	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued	N-Channel	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	450Ohm @ 50mA, 10V	4.5V @ 250µA	7.4 nC @ 10 V	±20V	116 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
AOK065A60 N Alpha & Omega Semiconductor Inc.	2,797	-	RFQ	برگه مشخصات	aMOS5™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	4.1A (Ta), 20A (Tc)	10V	-	-	34 nC @ 10 V	20V	1935 pF @ 100 V	-	8.3W (Ta), 208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
SIHH21N60E-T1-GE3 MOSFET N-CH 600V 20A PPAK 8 X 8 Vishay Siliconix	2,099	-	RFQ	برگه مشخصات	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	176mOhm @ 11A, 10V	4V @ 250µA	83 nC @ 10 V	±30V	2015 pF @ 100 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8
TSM60NB150CF 600V, 24A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	8,105	-	RFQ	-	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V	150mOhm @ 4.3A, 10V	4V @ 250µA	43 nC @ 10 V	±30V	1765 pF @ 100 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ITO-220S
IXTH20N65X MOSFET N-CH 650V 20A TO247 IXYS	8,230	-	RFQ	برگه مشخصات	Ultra X	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	210mOhm @ 10A, 10V	5.5V @ 250µA	35 nC @ 10 V	±30V	1390 pF @ 25 V	-	320W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
STU16N65M5 MOSFET N-CH 650V 12A IPAK STMicroelectronics	5	-	RFQ	برگه مشخصات	MDmesh™ V	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	299mOhm @ 6A, 10V	5V @ 250µA	45 nC @ 10 V	±25V	1250 pF @ 100 V	-	90W (Tc)	150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)
IRFPG30 MOSFET N-CH 1000V 3.1A TO247-3 Vishay Siliconix	6,836	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1000 V	3.1A (Tc)	10V	5Ohm @ 1.9A, 10V	4V @ 250µA	80 nC @ 10 V	±20V	980 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IXTP32N65X MOSFET N-CH 650V 32A TO220-3 IXYS	7,490	-	RFQ	برگه مشخصات	Ultra X	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	32A (Tc)	10V	135mOhm @ 16A, 10V	5.5V @ 250µA	54 nC @ 10 V	±30V	2205 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
SIHH11N65E-T1-GE3 MOSFET N-CH 650V 12A PPAK 8 X 8 Vishay Siliconix	6,942	-	RFQ	برگه مشخصات	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	363mOhm @ 6A, 10V	4V @ 250µA	68 nC @ 10 V	±30V	1257 pF @ 100 V	-	130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8
SCT2280KEC SICFET N-CH 1200V 14A TO247 Rohm Semiconductor	2,243	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Obsolete	N-Channel	SiCFET (Silicon Carbide)	1200 V	14A (Tc)	18V	364mOhm @ 4A, 18V	4V @ 1.4mA	36 nC @ 18 V	+22V, -6V	667 pF @ 800 V	-	108W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247
IXTH75N15 MOSFET N-CH 150V 75A TO247 IXYS	4,387	-	RFQ	-	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	75A (Tc)	10V	23mOhm @ 500mA, 10V	4V @ 250µA	210 nC @ 10 V	±20V	5400 pF @ 25 V	-	330W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFA6N120P-TRL MOSFET N-CH 1200V 6A TO263 Littelfuse Inc.	5,207	-	RFQ	برگه مشخصات	HiPerFET™, Polar	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	6A (Tc)	10V	2.4Ohm @ 500mA, 10V	5V @ 1mA	92 nC @ 10 V	±30V	2830 pF @ 25 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA (IXFA)
IRF7749L2TRPBF MOSFET N-CH 60V 33A DIRECTFET Infineon Technologies	2,873	-	RFQ	برگه مشخصات	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	33A (Ta), 375A (Tc)	10V	1.5mOhm @ 120A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	12320 pF @ 25 V	-	3.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DirectFET™ Isometric L8
DMWSH120H90SCT7 LINEAR IC Diodes Incorporated	4,746	-	RFQ	-	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	38.2A (Tc)	15V	90mOhm @ 20A, 15V	3.5V @ 5mA	54.6 nC @ 15 V	+19V, -8V	1078 pF @ 1000 V	-	197W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
2SK4209 MOSFET N-CH 800V 12A TO3PB onsemi	5,110	-	RFQ	برگه مشخصات	-	TO-3P-3, SC-65-3	Tray	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	12A (Ta)	10V	1.08Ohm @ 6A, 10V	4V @ 1mA	75 nC @ 10 V	±30V	1500 pF @ 30 V	-	2.5W (Ta), 190W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3PB
IXFH6N100F MOSFET N-CH 1000V 6A TO247 Littelfuse Inc.	9,313	-	RFQ	-	HiPerFET™, F Class	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	6A (Tc)	10V	1.9Ohm @ 3A, 10V	5.5V @ 2.5mA	54 nC @ 10 V	±20V	1770 pF @ 25 V	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXFH)
STP65N045M9 N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics	5,234	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	55A (Tc)	10V	45mOhm @ 28A, 10V	4.2V @ 250µA	80 nC @ 10 V	±30V	4610 pF @ 400 V	-	245W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220