جستجوی داغ ATXMEGA256A3U-MH PCF8563BS/4,118 610 CP30005 900-13448-0020-000 PS2561AL2-1-V-F3-L-A PS2561L2-1-V-H-A VO617A ACPL-570KL 4N25

در دسترس ۲۴/۷ در

+86 13632816717

خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
RFG60P05E MOSFET P-CH 50V 60A TO247-3 onsemi	5,731	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	50 V	60A (Tc)	10V	30mOhm @ 60A, 10V	4V @ 250µA	450 nC @ 20 V	±20V	7200 pF @ 25 V	-	215W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
STW25N95K3 MOSFET N-CH 950V 22A TO247 STMicroelectronics	5,266	-	RFQ	برگه مشخصات	SuperMESH3™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	950 V	22A (Tc)	10V	360mOhm @ 11A, 10V	5V @ 150µA	105 nC @ 10 V	±30V	3680 pF @ 100 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IXTA6N100D2HV MOSFET N-CH 1000V 6A TO263HV Littelfuse Inc.	7,136	-	RFQ	برگه مشخصات	Depletion	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	6A (Tj)	0V	2.2Ohm @ 3A, 0V	4.5V @ 250µA	95 nC @ 5 V	±20V	2650 pF @ 10 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263HV
IXTH52N65X MOSFET N-CH 650V 52A TO247 IXYS	9,881	-	RFQ	برگه مشخصات	Ultra X	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	52A (Tc)	10V	68mOhm @ 26A, 10V	5V @ 250µA	113 nC @ 10 V	±30V	4350 pF @ 25 V	-	660W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
STW55NM50N MOSFET N-CH 500V 54A TO247-3 STMicroelectronics	2,001	-	RFQ	برگه مشخصات	MDmesh™ II	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	54A (Tc)	10V	54mOhm @ 27A, 10V	4V @ 250µA	180 nC @ 10 V	±25V	5800 pF @ 50 V	-	350W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3
IXTH12N90 MOSFET N-CH 900V 12A TO247 IXYS	2,360	-	RFQ	-	MegaMOS™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	12A (Tc)	10V	900mOhm @ 6A, 10V	4.5V @ 250µA	170 nC @ 10 V	±20V	4500 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
APT1003RBLLG MOSFET N-CH 1000V 4A TO247 Microchip Technology	3,799	-	RFQ	برگه مشخصات	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	4A (Tc)	10V	3Ohm @ 2A, 10V	5V @ 1mA	34 nC @ 10 V	±30V	694 pF @ 25 V	-	139W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
APT14F100S MOSFET N-CH 1000V 14A D3PAK Microchip Technology	9,915	-	RFQ	برگه مشخصات	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	14A (Tc)	10V	980mOhm @ 7A, 10V	5V @ 1mA	120 nC @ 10 V	±30V	3965 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D3PAK
IXFH17N80Q MOSFET N-CH 800V 17A TO247AD IXYS	4,178	-	RFQ	-	HiPerFET™, Q Class	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	600mOhm @ 500mA, 10V	4.5V @ 4mA	95 nC @ 10 V	±20V	3600 pF @ 25 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IXTT88N15 MOSFET N-CH 150V 88A TO268 IXYS	5,144	-	RFQ	-	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Box	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	88A (Tc)	10V	22mOhm @ 44A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	4000 pF @ 25 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
LSIC1MO120T0120-TU 1200V/120MOHM SIC MOSFET TO-263- IXYS	3,188	-	RFQ	-	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	27A (Tc)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-7
IXTA02N450HV MOSFET N-CH 4500V 200MA TO263 IXYS	6,510	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4500 V	200mA (Tc)	10V	750Ohm @ 10mA, 10V	6.5V @ 250µA	10.4 nC @ 10 V	±20V	256 pF @ 25 V	-	113W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
IXFH12N90 MOSFET N-CH 900V 12A TO247AD IXYS	4,983	-	RFQ	برگه مشخصات	HiPerFET™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	12A (Tc)	10V	900mOhm @ 6A, 10V	4.5V @ 4mA	155 nC @ 10 V	±20V	4200 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
NTBGS002N06C POWER MOSFET, 60 V, 2.2 M?, 211 onsemi	3,388	-	RFQ	برگه مشخصات	-	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	30A (Ta), 211A (Tc)	10V, 12V	2.1mOhm @ 45A, 12V	4V @ 225µA	62.1 nC @ 10 V	±20V	4620 pF @ 30 V	-	3.7W (Ta), 178W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
STY30NK90Z MOSFET N-CH 900V 26A MAX247 STMicroelectronics	7,991	-	RFQ	برگه مشخصات	SuperMESH™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	26A (Tc)	10V	260mOhm @ 14A, 10V	4.5V @ 150µA	490 nC @ 10 V	±30V	12000 pF @ 25 V	-	450W (Tc)	-65°C ~ 150°C (TJ)	-	-	Through Hole	MAX247™
IXTH12N100 MOSFET N-CH 1000V 12A TO247 IXYS	3,793	-	RFQ	-	MegaMOS™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1000 V	12A (Tc)	10V	1.05Ohm @ 6A, 10V	4.5V @ 250µA	170 nC @ 10 V	±20V	4000 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFH50N60X MOSFET N-CH 600V 50A TO247 IXYS	8,992	-	RFQ	برگه مشخصات	HiPerFET™, Ultra X	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	73mOhm @ 25A, 10V	4.5V @ 4mA	116 nC @ 10 V	±30V	4660 pF @ 25 V	-	660W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXTQ30N50L2 MOSFET N-CH 500V 30A TO3P Littelfuse Inc.	7,581	-	RFQ	برگه مشخصات	Linear L2™	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	10V	200mOhm @ 15A, 10V	4.5V @ 250µA	240 nC @ 10 V	±20V	8100 pF @ 25 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
IXFT80N65X2HV-TRL MOSFET N-CH 650V 80A TO268HV Littelfuse Inc.	8,931	-	RFQ	-	HiPerFET™, Ultra X2	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	38mOhm @ 40A, 10V	5V @ 4mA	140 nC @ 10 V	±30V	8300 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)
GA06JT12-247 TRANS SJT 1200V 6A TO247AB GeneSiC Semiconductor	3,911	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	1200 V	6A (Tc) (90°C)	-	220mOhm @ 6A	-	-	-	-	-	-	175°C (TJ)	-	-	Through Hole	TO-247AB