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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
IRFZ24 MOSFET N-CH 60V 17A TO220AB Vishay Siliconix	8,551	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	17A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	640 pF @ 25 V	-	60W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRFZ14 MOSFET N-CH 60V 10A TO220AB Vishay Siliconix	3,859	-	RFQ	-	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	10A (Tc)	10V	200mOhm @ 6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRFBC20 MOSFET N-CH 600V 2.2A TO220AB Vishay Siliconix	7,642	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	2.2A (Tc)	10V	4.4Ohm @ 1.3A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	350 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRFBC30 MOSFET N-CH 600V 3.6A TO220AB Vishay Siliconix	8,634	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	4V @ 250µA	31 nC @ 10 V	±20V	660 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRF9Z10 MOSFET P-CH 60V 6.7A TO220AB Vishay Siliconix	2,242	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	6.7A (Tc)	10V	500mOhm @ 4A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRF9Z34 MOSFET P-CH 60V 18A TO220AB Vishay Siliconix	7,310	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	18A (Tc)	10V	140mOhm @ 11A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	1100 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
ZVP2120A MOSFET P-CH 200V 120MA TO92-3 Diodes Incorporated	3,825	-	RFQ	برگه مشخصات	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	120mA (Ta)	10V	25Ohm @ 150mA, 10V	3.5V @ 1mA	-	±20V	100 pF @ 25 V	-	700mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92
ZVP4105A MOSFET P-CH 50V 175MA TO92-3 Diodes Incorporated	3,194	-	RFQ	برگه مشخصات	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	50 V	175mA (Ta)	5V	10Ohm @ 100mA, 5V	2V @ 1mA	-	±20V	40 pF @ 25 V	-	625mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92
IRFI840G MOSFET N-CH 500V 4.6A TO220-3 Vishay Siliconix	2,498	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	4.6A (Tc)	10V	850mOhm @ 2.8A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1300 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IRFP240 MOSFET N-CH 200V 20A TO247-3 Vishay Siliconix	8,907	-	RFQ	-	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	20A (Tc)	10V	180mOhm @ 12A, 10V	4V @ 250µA	70 nC @ 10 V	±20V	1300 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFP264 MOSFET N-CH 250V 38A TO247-3 Vishay Siliconix	3,041	-	RFQ	-	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	38A (Tc)	10V	75mOhm @ 23A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	5400 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFP360 MOSFET N-CH 400V 23A TO247-3 Vishay Siliconix	2,485	-	RFQ	-	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	23A (Tc)	10V	200mOhm @ 14A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	4500 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFP440 MOSFET N-CH 500V 8.8A TO247-3 Vishay Siliconix	9,302	-	RFQ	-	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	8.8A (Tc)	10V	850mOhm @ 5.3A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1300 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFP450 MOSFET N-CH 500V 14A TO247-3 Vishay Siliconix	5,058	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	14A (Tc)	10V	400mOhm @ 8.4A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	2600 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFP460 MOSFET N-CH 500V 20A TO247-3 Vishay Siliconix	3,382	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	270mOhm @ 12A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	4200 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFPE50 MOSFET N-CH 800V 7.8A TO247-3 Vishay Siliconix	7,737	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	7.8A (Tc)	10V	1.2Ohm @ 4.7A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	3100 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFPF50 MOSFET N-CH 900V 6.7A TO247-3 Vishay Siliconix	2,542	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	6.7A (Tc)	10V	1.6Ohm @ 4A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	2900 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFP9240 MOSFET P-CH 200V 12A TO247-3 Vishay Siliconix	3,496	-	RFQ	-	-	TO-247-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	12A (Tc)	10V	500mOhm @ 7.2A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1200 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFBE30 MOSFET N-CH 800V 4.1A TO220AB Vishay Siliconix	7,855	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRFBF20 MOSFET N-CH 900V 1.7A TO220AB Vishay Siliconix	2,790	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	1.7A (Tc)	10V	8Ohm @ 1A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	490 pF @ 25 V	-	54W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB