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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
IRF6215L MOSFET P-CH 150V 13A TO262 Infineon Technologies	5,174	-	RFQ	برگه مشخصات	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	150 V	13A (Tc)	10V	290mOhm @ 6.6A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	860 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF9540NL MOSFET P-CH 100V 23A TO262 Infineon Technologies	5,968	-	RFQ	برگه مشخصات	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	117mOhm @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	1300 pF @ 25 V	-	3.8W (Ta), 140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262
IRF9Z34NL MOSFET P-CH 55V 19A TO262 Infineon Technologies	4,321	-	RFQ	برگه مشخصات	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	620 pF @ 25 V	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF7534D1 MOSFET P-CH 20V 4.3A MICRO8 Infineon Technologies	9,699	-	RFQ	برگه مشخصات	FETKY™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	4.3A (Ta)	2.5V, 4.5V	55mOhm @ 4.3A, 4.5V	1.2V @ 250µA	15 nC @ 5 V	±12V	1066 pF @ 10 V	Schottky Diode (Isolated)	1.25W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro8™
IRF7526D1 MOSFET P-CH 30V 2A MICRO8 Infineon Technologies	9,532	-	RFQ	برگه مشخصات	FETKY™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	2A (Ta)	4.5V, 10V	200mOhm @ 1.2A, 10V	1V @ 250µA	11 nC @ 10 V	±20V	180 pF @ 25 V	Schottky Diode (Isolated)	1.25W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro8™
IRF1310NSTRR MOSFET N-CH 100V 42A D2PAK Infineon Technologies	8,566	-	RFQ	برگه مشخصات	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	10V	36mOhm @ 22A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	1900 pF @ 25 V	-	3.8W (Ta), 160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF3315STRR MOSFET N-CH 150V 21A D2PAK Infineon Technologies	4,235	-	RFQ	برگه مشخصات	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	21A (Tc)	10V	82mOhm @ 12A, 10V	4V @ 250µA	95 nC @ 10 V	±20V	1300 pF @ 25 V	-	3.8W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF3415STRR MOSFET N-CH 150V 43A D2PAK Infineon Technologies	9,476	-	RFQ	برگه مشخصات	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	43A (Tc)	10V	42mOhm @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	2400 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF3704STRL MOSFET N-CH 20V 77A D2PAK Infineon Technologies	8,677	-	RFQ	برگه مشخصات	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	77A (Tc)	4.5V, 10V	9mOhm @ 15A, 10V	3V @ 250µA	19 nC @ 4.5 V	±20V	1996 pF @ 10 V	-	87W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF520NSTRL MOSFET N-CH 100V 9.7A D2PAK Infineon Technologies	4,958	-	RFQ	برگه مشخصات	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	9.7A (Tc)	10V	200mOhm @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	330 pF @ 25 V	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF520NSTRR MOSFET N-CH 100V 9.7A D2PAK Infineon Technologies	4,760	-	RFQ	برگه مشخصات	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	9.7A (Tc)	10V	200mOhm @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	330 pF @ 25 V	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF520STRR MOSFET N-CH 100V 9.2A D2PAK Vishay Siliconix	6,925	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	9.2A (Tc)	10V	270mOhm @ 5.5A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF530L MOSFET N-CH 100V 14A TO262 Vishay Siliconix	2,346	-	RFQ	برگه مشخصات	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	160mOhm @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	670 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF540L MOSFET N-CH 100V 28A TO262 Vishay Siliconix	4,954	-	RFQ	برگه مشخصات	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	28A (Tc)	10V	77mOhm @ 17A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	1700 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF614L MOSFET N-CH 250V 2.7A TO262 Vishay Siliconix	7,731	-	RFQ	-	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	2.7A (Tc)	10V	2Ohm @ 1.6A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	140 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262
IRF624L MOSFET N-CH 250V 4.4A I2PAK Vishay Siliconix	5,797	-	RFQ	برگه مشخصات	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	4.4A (Tc)	10V	1.1Ohm @ 2.6A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF630L MOSFET N-CH 200V 9A I2PAK Vishay Siliconix	3,792	-	RFQ	برگه مشخصات	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	9A (Tc)	10V	400mOhm @ 5.4A, 10V	4V @ 250µA	43 nC @ 10 V	±20V	800 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF634L MOSFET N-CH 250V 8.1A I2PAK Vishay Siliconix	7,568	-	RFQ	برگه مشخصات	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	8.1A (Tc)	10V	450mOhm @ 5.1A, 10V	4V @ 250µA	41 nC @ 10 V	±20V	770 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF7207TR MOSFET P-CH 20V 5.4A 8SO Infineon Technologies	8,463	-	RFQ	برگه مشخصات	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	5.4A (Tc)	2.7V, 4.5V	60mOhm @ 5.4A, 4.5V	700mV @ 250µA (Min)	22 nC @ 4.5 V	±12V	780 pF @ 15 V	-	2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7322D1TR MOSFET P-CH 20V 5.3A 8SO Infineon Technologies	9,614	-	RFQ	برگه مشخصات	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	5.3A (Ta)	2.7V, 4.5V	62mOhm @ 2.9A, 4.5V	700mV @ 250µA (Min)	29 nC @ 4.5 V	±12V	780 pF @ 15 V	Schottky Diode (Isolated)	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO