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FET، ماسفت

عکس شماره قطعه تولیدکننده موجودی قیمت تعداد برگه مشخصات سری بسته / کیس بسته بندی وضعیت محصول نوع FET تکنولوژی تخلیه به ولتاژ منبع (Vdss) جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن) Rds روشن (حداکثر) @ ID، Vgs Vgs(th) (Max) @ ID شارژ دروازه (Qg) (حداکثر) @ Vgs Vgs (حداکثر) ظرفیت ورودی (Ciss) (حداکثر) @ Vds ویژگی FET اتلاف نیرو (حداکثر) دمای عملیاتی درجه صلاحیت نوع نصب بسته دستگاه تامین کننده
IPD50N06S409ATMA1

IPD50N06S409ATMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies

2,624
RFQ
IPD50N06S409ATMA1

برگه مشخصات

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 34µA 47 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD60R520C6BTMA1

IPD60R520C6BTMA1

MOSFET N-CH 600V 8.1A TO252-3

Infineon Technologies

4,054
RFQ
IPD60R520C6BTMA1

برگه مشخصات

CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD90N06S404ATMA1

IPD90N06S404ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

2,398
RFQ
IPD90N06S404ATMA1

برگه مشخصات

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S405ATMA1

IPD90N06S405ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

5,826
RFQ
IPD90N06S405ATMA1

برگه مشخصات

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 5.1mOhm @ 90A, 10V 4V @ 60µA 81 nC @ 10 V ±20V 6500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S407ATMA1

IPD90N06S407ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

3,939
RFQ
IPD90N06S407ATMA1

برگه مشخصات

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 6.9mOhm @ 90A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S4L03ATMA1

IPD90N06S4L03ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

8,216
RFQ
IPD90N06S4L03ATMA1

برگه مشخصات

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.5mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S4L05ATMA1

IPD90N06S4L05ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

3,262
RFQ
IPD90N06S4L05ATMA1

برگه مشخصات

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 4.6mOhm @ 90A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD90N06S4L06ATMA1

IPD90N06S4L06ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

5,665
RFQ
IPD90N06S4L06ATMA1

برگه مشخصات

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 6.3mOhm @ 90A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPI023NE7N3 G

IPI023NE7N3 G

MOSFET N-CH 75V 120A TO262-3

Infineon Technologies

8,539
RFQ
IPI023NE7N3 G

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) - 2.3mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V - 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI034NE7N3 G

IPI034NE7N3 G

MOSFET N-CH 75V 100A TO262-3

Infineon Technologies

7,700
RFQ
IPI034NE7N3 G

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) - 3.4mOhm @ 100A, 10V 3.8V @ 155µA 117 nC @ 10 V - 8130 pF @ 37.5 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI052NE7N3 G

IPI052NE7N3 G

MOSFET N-CH 75V 80A TO262-3

Infineon Technologies

2,885
RFQ
IPI052NE7N3 G

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI126N10N3 G

IPI126N10N3 G

MOSFET N-CH 100V 58A TO262-3

Infineon Technologies

5,326
RFQ
IPI126N10N3 G

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 6V, 10V 12.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI45N06S4L08AKSA1

IPI45N06S4L08AKSA1

MOSFET N-CH 60V 45A TO262-3

Infineon Technologies

7,975
RFQ
IPI45N06S4L08AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 8.2mOhm @ 45A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI45P03P4L11AKSA1

IPI45P03P4L11AKSA1

MOSFET P-CH 30V 45A TO262-3

Infineon Technologies

5,897
RFQ
IPI45P03P4L11AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 11.1mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI50R199CPXKSA1

IPI50R199CPXKSA1

MOSFET N-CH 500V 17A TO262-3

Infineon Technologies

3,561
RFQ
IPI50R199CPXKSA1

برگه مشخصات

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI60R380C6XKSA1

IPI60R380C6XKSA1

MOSFET N-CH 600V 10.6A TO262-3

Infineon Technologies

6,116
RFQ
IPI60R380C6XKSA1

برگه مشخصات

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S405AKSA1

IPI80N06S405AKSA1

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

9,896
RFQ
IPI80N06S405AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 60µA 81 nC @ 10 V ±20V 6500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80N06S407AKSA1

IPI80N06S407AKSA1

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

5,134
RFQ
IPI80N06S407AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80P03P4L04AKSA1

IPI80P03P4L04AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies

9,980
RFQ
IPI80P03P4L04AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI80P03P4L07AKSA1

IPI80P03P4L07AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies

8,499
RFQ
IPI80P03P4L07AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 7.2mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3

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