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FET، ماسفت

عکس شماره قطعه تولیدکننده موجودی قیمت تعداد برگه مشخصات سری بسته / کیس بسته بندی وضعیت محصول نوع FET تکنولوژی تخلیه به ولتاژ منبع (Vdss) جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن) Rds روشن (حداکثر) @ ID، Vgs Vgs(th) (Max) @ ID شارژ دروازه (Qg) (حداکثر) @ Vgs Vgs (حداکثر) ظرفیت ورودی (Ciss) (حداکثر) @ Vds ویژگی FET اتلاف نیرو (حداکثر) دمای عملیاتی درجه صلاحیت نوع نصب بسته دستگاه تامین کننده
IPD65R650CEATMA1

IPD65R650CEATMA1

MOSFET N-CH 650V 10.1A TO252-3

Infineon Technologies

7,288
RFQ
IPD65R650CEATMA1

برگه مشخصات

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.1A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD85P04P407ATMA1

IPD85P04P407ATMA1

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies

2,472
RFQ
IPD85P04P407ATMA1

برگه مشخصات

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 10V 7.3mOhm @ 85A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-313
IPI120N08S403AKSA1

IPI120N08S403AKSA1

MOSFET N-CH 80V 120A TO262-3

Infineon Technologies

4,497
RFQ
IPI120N08S403AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 223µA 167 nC @ 10 V ±20V 11550 pF @ 25 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI120N08S404AKSA1

IPI120N08S404AKSA1

MOSFET N-CH 80V 120A TO262-3

Infineon Technologies

5,070
RFQ
IPI120N08S404AKSA1

برگه مشخصات

OptiMOS™ T2 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.4mOhm @ 100A, 10V 4V @ 120µA 95 nC @ 10 V ±20V 6450 pF @ 25 V - 179W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI120N10S403AKSA1

IPI120N10S403AKSA1

MOSFET N-CH 100V 120A TO262-3

Infineon Technologies

9,857
RFQ
IPI120N10S403AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI120N10S405AKSA1

IPI120N10S405AKSA1

MOSFET N-CH 100V 120A TO262-3

Infineon Technologies

8,076
RFQ
IPI120N10S405AKSA1

برگه مشخصات

OptiMOS™ T2 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.3mOhm @ 100A, 10V 3.5V @ 120µA 91 nC @ 10 V ±20V 6540 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI120P04P4L03AKSA1

IPI120P04P4L03AKSA1

MOSFET P-CH 40V 120A TO262-3

Infineon Technologies

8,811
RFQ
IPI120P04P4L03AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V ±16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI65R280E6XKSA1

IPI65R280E6XKSA1

MOSFET N-CH 650V 13.8A TO262-3

Infineon Technologies

9,829
RFQ
IPI65R280E6XKSA1

برگه مشخصات

CoolMOS™ E6 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
IPI80P03P405AKSA1

IPI80P03P405AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies

4,711
RFQ
IPI80P03P405AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 5mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI80P04P405AKSA1

IPI80P04P405AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies

8,067
RFQ
IPI80P04P405AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPI80P04P4L04AKSA1

IPI80P04P4L04AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies

8,204
RFQ
IPI80P04P4L04AKSA1

برگه مشخصات

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V +5V, -16V 3800 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
IPL65R165CFDAUMA1

IPL65R165CFDAUMA1

MOSFET N-CH 650V 21.3A 4VSON

Infineon Technologies

6,819
RFQ
IPL65R165CFDAUMA1

برگه مشخصات

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 21.3A (Tc) 10V 165mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R190E6AUMA1

IPL65R190E6AUMA1

MOSFET N-CH 650V 20.2A 4VSON

Infineon Technologies

7,482
RFQ
IPL65R190E6AUMA1

برگه مشخصات

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 700µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R210CFDAUMA1

IPL65R210CFDAUMA1

MOSFET N-CH 650V 16.6A 4VSON

Infineon Technologies

6,956
RFQ
IPL65R210CFDAUMA1

برگه مشخصات

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 16.6A (Tc) 10V 210mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R310E6AUMA1

IPL65R310E6AUMA1

MOSFET N-CH 650V 13.1A THIN-PAK

Infineon Technologies

2,333
RFQ
IPL65R310E6AUMA1

برگه مشخصات

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.1A (Tc) 10V 310mOhm @ 4.4A, 10V 3.5V @ 400µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R340CFDAUMA1

IPL65R340CFDAUMA1

MOSFET N-CH 650V 10.9A THIN-PAK

Infineon Technologies

4,797
RFQ
IPL65R340CFDAUMA1

برگه مشخصات

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.9A (Tc) 10V 340mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R420E6AUMA1

IPL65R420E6AUMA1

MOSFET N-CH 650V 10.1A THIN-PAK

Infineon Technologies

6,988
RFQ
IPL65R420E6AUMA1

برگه مشخصات

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.1A (Tc) 10V 420mOhm @ 3.4A, 10V 3.5V @ 300µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R460CFDAUMA1

IPL65R460CFDAUMA1

MOSFET N-CH 650V 8.3A THIN-PAK

Infineon Technologies

2,551
RFQ
IPL65R460CFDAUMA1

برگه مشخصات

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 8.3A (Tc) 10V 460mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPL65R660E6AUMA1

IPL65R660E6AUMA1

MOSFET N-CH 650V 7A THIN-PAK

Infineon Technologies

5,788
RFQ
IPL65R660E6AUMA1

برگه مشخصات

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 660mOhm @ 2.1A, 10V 3.5V @ 200µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPP120P04P404AKSA1

IPP120P04P404AKSA1

MOSFET P-CH 40V 120A TO220-3

Infineon Technologies

3,291
RFQ
IPP120P04P404AKSA1

برگه مشخصات

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.8mOhm @ 100A, 10V 4V @ 340µA 205 nC @ 10 V ±20V 14790 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1

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