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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
NP180N055TUK-E1-AY MOSFET N-CH 55V 180A TO263-7 Renesas Electronics Corporation	2,182	-	RFQ	برگه مشخصات	-	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	55 V	180A (Tc)	10V	1.4mOhm @ 90A, 10V	4V @ 250µA	294 nC @ 10 V	±20V	16050 pF @ 25 V	-	1.8W (Ta), 348W (Tc)	175°C (TJ)	-	-	Surface Mount	TO-263-7
NTMTS0D6N04CTXG MOSFET N-CH 40V 533A onsemi	8,417	-	RFQ	برگه مشخصات	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	533A (Tc)	10V	0.48mOhm @ 50A, 10V	4V @ 250µA	187 nC @ 10 V	±20V	11800 pF @ 20 V	-	5W	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-DFNW (8.3x8.4)
SIHB21N65EF-GE3 MOSFET N-CH 650V 21A D2PAK Vishay Siliconix	143	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	21A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	106 nC @ 10 V	±30V	2322 pF @ 100 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
STW65N60DM6 MOSFET N-CH 600V 38A TO247 STMicroelectronics	592	-	RFQ	برگه مشخصات	MDmesh™ DM6	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38A (Tc)	-	-	-	-	±25V	-	-	-	-	-	-	Through Hole	TO-247-3
IPL60R104C7AUMA1 MOSFET N-CH 600V 20A 4VSON Infineon Technologies	8,897	-	RFQ	برگه مشخصات	CoolMOS™ C7	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	104mOhm @ 9.7A, 10V	4V @ 490µA	42 nC @ 10 V	±20V	1819 pF @ 400 V	-	122W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-VSON-4
IPTG063N15NM5ATMA1 TRENCH >=100V Infineon Technologies	1,774	-	RFQ	برگه مشخصات	OptiMOS™ 5	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	16.2A (Ta), 122A (Tc)	8V, 10V	6.3mOhm @ 50A, 10V	4.6V @ 163µA	63 nC @ 10 V	±20V	4800 pF @ 75 V	-	3.8W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOG-8
FDP054N10 MOSFET N-CH 100V 120A TO220-3 onsemi	676	-	RFQ	برگه مشخصات	PowerTrench®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	5.5mOhm @ 75A, 10V	4.5V @ 250µA	203 nC @ 10 V	±20V	13280 pF @ 25 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
R6025JNXC7G MOSFET N-CH 600V 25A TO220FM Rohm Semiconductor	1,961	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Tc)	15V	182mOhm @ 12.5A, 15V	7V @ 4.5mA	57 nC @ 15 V	±30V	1900 pF @ 100 V	-	85W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FM
NTMT190N65S3H POWER MOSFET, N-CHANNEL, SUPERFE onsemi	2,064	-	RFQ	برگه مشخصات	SuperFET® III	4-PowerTSFN	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	16A (Tc)	10V	190mOhm @ 8A, 10V	4V @ 1.4mA	31 nC @ 10 V	±30V	1600 pF @ 400 V	-	129W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-TDFN (8x8)
SQJ456EP-T1_GE3 MOSFET N-CH 100V 32A PPAK SO-8 Vishay Siliconix	4,408	-	RFQ	برگه مشخصات	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	32A (Tc)	6V, 10V	26mOhm @ 9.3A, 10V	3.5V @ 250µA	63 nC @ 10 V	±20V	3342 pF @ 25 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8
AUIRFP4110 MOSFET N-CH 100V 120A TO247AC Infineon Technologies	340	-	RFQ	برگه مشخصات	HEXFET®	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.5mOhm @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	9620 pF @ 50 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
R8007AND3FRATL MOSFET N-CH 800V 7A TO252 Rohm Semiconductor	4,914	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	1.6Ohm @ 3.5A, 10V	5V @ 1mA	28 nC @ 10 V	±30V	850 pF @ 25 V	-	140W (Tc)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252
STL26NM60N MOSFET N-CH 600V 19A POWERFLAT STMicroelectronics	2,609	-	RFQ	برگه مشخصات	MDmesh™ II	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.7A (Ta), 19A (Tc)	10V	185mOhm @ 10A, 10V	5V @ 250µA	60 nC @ 10 V	±30V	1800 pF @ 50 V	-	125mW (Ta), 3W (Tc)	150°C (TJ)	-	-	Surface Mount	PowerFlat™ (8x8) HV
SIHB120N60E-GE3 MOSFET N-CH 600V 25A D2PAK Vishay Siliconix	906	-	RFQ	برگه مشخصات	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	120mOhm @ 12A, 10V	5V @ 250µA	45 nC @ 10 V	±30V	1562 pF @ 100 V	-	179W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
STH270N8F7-2 MOSFET N-CH 80V 180A H2PAK STMicroelectronics	480	-	RFQ	برگه مشخصات	DeepGATE™, STripFET™ VII	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	180A (Tc)	10V	2.1mOhm @ 90A, 10V	4V @ 250µA	193 nC @ 10 V	±20V	13600 pF @ 50 V	-	315W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	H2PAK
STF13N95K3 MOSFET N-CH 950V 10A TO220FP STMicroelectronics	975	-	RFQ	برگه مشخصات	SuperMESH3™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	950 V	10A (Tc)	10V	850mOhm @ 5A, 10V	5V @ 100µA	51 nC @ 10 V	±30V	1620 pF @ 100 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
TK090U65Z,RQ DTMOS VI TOLL PD=230W F=1MHZ Toshiba Semiconductor and Storage	2,118	-	RFQ	برگه مشخصات	DTMOSVI	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	230W (Tc)	150°C	-	-	Surface Mount	TOLL
NTHL110N65S3F MOSFET N-CH 650V 30A TO247-3 onsemi	895	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	110mOhm @ 15A, 10V	5V @ 3mA	58 nC @ 10 V	±30V	2560 pF @ 400 V	-	240W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IPW60R125C6FKSA1 MOSFET N-CH 600V 30A TO247-3 Infineon Technologies	272	-	RFQ	برگه مشخصات	CoolMOS™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	125mOhm @ 14.5A, 10V	3.5V @ 960µA	96 nC @ 10 V	±20V	2127 pF @ 100 V	-	219W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1
FCH110N65F-F155 MOSFET N-CH 650V 35A TO247 onsemi	761	-	RFQ	برگه مشخصات	FRFET®, SuperFET® II	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	35A (Tc)	10V	110mOhm @ 17.5A, 10V	5V @ 3.5mA	145 nC @ 10 V	±20V	4895 pF @ 100 V	-	357W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3