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شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
S3M0040120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	برگه مشخصات	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	76A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+20V, -8V	2844 pF @ 1000 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
TSG65N110CE RVG 650V, 18A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation	3,000	-	RFQ	برگه مشخصات	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMDQ75R027M1HXUMA1 AIMDQ75R027M1HXUMA1 Infineon Technologies	671	-	RFQ	-	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	64A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	5.6V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1668 pF @ 500 V	-	273W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
G3F40MT12K 1200V 40M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	552	-	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	55A (Tc)	18V	53mOhm @ 20A, 18V	4.3V @ 16mA	86 nC @ 18 V	+22V, -10V	2023 pF @ 800 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
AOK033V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	208	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	15V	43mOhm @ 20A, 15V	2.8V @ 17.5mA	104 nC @ 15 V	+15V, -5V	2908 pF @ 800 V	-	300W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
NSF060120L4A0Q NSF060120L4A0/SOT8071/TO247-4L Nexperia USA Inc.	450	-	RFQ	برگه مشخصات	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPDQ60R017S7AXTMA1 MOSFET Infineon Technologies	750	-	RFQ	برگه مشخصات	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.89mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
IMZC120R026M2HXKSA1 IMZC120R026M2HXKSA1 Infineon Technologies	215	-	RFQ	برگه مشخصات	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	69A (Tc)	15V, 18V	25mOhm @ 27A, 18V	5.1V @ 8.6mA	60 nC @ 18 V	+23V, -7V	1990 pF @ 800 V	-	289W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
IMZA75R027M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	239	-	RFQ	برگه مشخصات	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	60A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	5.6V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1668 pF @ 500 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4
AOK065V120X2 SILICON CARBIDE MOSFET, ENHANCEM Alpha & Omega Semiconductor Inc.	118	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40.3A (Tc)	15V	85mOhm @ 20A, 15V	3.5V @ 250µA	62.3 nC @ 15 V	+18V, -8V	1716 pF @ 800 V	-	187.5W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
SCT060HU75G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	582	-	RFQ	برگه مشخصات	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	30A (Tc)	15V, 18V	78mOhm @ 15A, 18V	4.2V @ 1mA	29 nC @ 18 V	4.2V @ 1mA	680 pF @ 400 V	-	185W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	HU3PAK
IPZA60R016CM8XKSA1 IPZA60R016CM8XKSA1 Infineon Technologies	391	-	RFQ	-	CoolMOS™	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	123A (Tc)	10V	16mOhm @ 62.5A, 10V	4.7V @ 1.48mA	171 nC @ 10 V	±20V	7545 pF @ 400 V	-	521W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4-U02
NVBG023N065M3S SIC MOS D2PAK-7L 23MOHM 650V M3S onsemi	1,600	-	RFQ	-	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	70A (Tc)	15V, 18V	33mOhm @ 20A, 18V	4V @ 10mA	69 nC @ 18 V	+22V, -8V	1951 pF @ 400 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7
G3F33MT06K 650V 27M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	-	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	74A (Tc)	15V, 18V	38mOhm @ 26A, 18V	4.3V @ 12mA	81 nC @ 18 V	+22V, -10V	2394 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
NVHL060N065SC1 SIC MOS TO247-3L 650V onsemi	450	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	47A (Tc)	15V, 18V	70mOhm @ 20A, 18V	4.3V @ 6.5mA	74 nC @ 18 V	+22V, -8V	1473 pF @ 325 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
GS66502B-MR GS66502B-MR Infineon Technologies Canada Inc.	208	-	RFQ	-	-	3-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.5A (Tc)	6V	260mOhm @ 2.25A, 6V	2.6V @ 1.75mA	1.6 nC @ 6 V	+7V, -10V	60 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
TW048Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 48 Toshiba Semiconductor and Storage	243	-	RFQ	برگه مشخصات	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40A (Tc)	18V	69mOhm @ 20A, 18V	5V @ 1.6mA	41 nC @ 18 V	+25V, -10V	1362 pF @ 400 V	-	132W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
AIMBG120R060M1XTMA1 SIC_DISCRETE Infineon Technologies	959	-	RFQ	برگه مشخصات	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	38A (Tc)	18V, 20V	75mOhm @ 13A, 20V	5.1V @ 4.3mA	32 nC @ 20 V	+23V, -5V	880 pF @ 800 V	-	202W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-12
NVHL023N065M3S SIC MOS TO247-3L 23MOHM 650V M3S onsemi	440	-	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	70A (Tc)	15V, 18V	33mOhm @ 20A, 18V	4V @ 10mA	69 nC @ 18 V	+22V, -8V	1952 pF @ 400 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
SCTH35N65G2V-7AG SICFET N-CH 650V 45A H2PAK-7 STMicroelectronics	1,000	-	RFQ	برگه مشخصات	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	5V @ 1mA	73 nC @ 20 V	+22V, -10V	1370 pF @ 400 V	-	208W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7