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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
2SK2935-92-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	258	-	RFQ	برگه مشخصات	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFP3415PBF MOSFET N-CH 150V 43A TO247AC Infineon Technologies	3,355	-	RFQ	برگه مشخصات	HEXFET®	TO-247-3	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	150 V	43A (Tc)	10V	42mOhm @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	2400 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
RFH30N12 N-CHANNEL POWER MOSFET Harris Corporation	268	-	RFQ	برگه مشخصات	-	TO-218-3 Isolated Tab, TO-218AC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	120 V	30A (Tc)	10V	75mOhm @ 15A, 10V	4V @ 1mA	-	±20V	3000 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-218 Isolated
SIDR220DP-T1-RE3 N-CHANNEL 25-V (D-S) MOSFET Vishay Siliconix	5,970	-	RFQ	برگه مشخصات	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25 V	87.7A (Ta), 100A (Tc)	4.5V, 10V	5.8mOhm @ 20A, 10V	2.1V @ 250µA	200 nC @ 10 V	+16V, -12V	10850 pF @ 10 V	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8DC
IXTP18P10T MOSFET P-CH 100V 18A TO220AB Littelfuse Inc.	1,264	-	RFQ	برگه مشخصات	TrenchP™	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	18A (Tc)	10V	120mOhm @ 9A, 10V	4.5V @ 250µA	39 nC @ 10 V	±15V	2100 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IRLI630GPBF MOSFET N-CH 200V 6.2A TO220-3 Vishay Siliconix	988	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	6.2A (Tc)	4V, 5V	400mOhm @ 3.7A, 5V	2V @ 250µA	40 nC @ 10 V	±10V	1100 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
BSC0403NSATMA1 150V, N-CH MOSFET, LOGIC LEVEL, Infineon Technologies	249	-	RFQ	برگه مشخصات	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	70A (Tc)	8V, 10V	11mOhm @ 35A, 10	4.6V @ 91µA	28 nC @ 10 V	±20V	2100 pF @ 75 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-7
BSC079N10NSGATMA1 MOSFET N-CH 100V 13.4A 8TDSON Infineon Technologies	4,701	-	RFQ	برگه مشخصات	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	13.4A (Ta), 100A (Tc)	10V	7.9mOhm @ 50A, 10V	4V @ 110µA	87 nC @ 10 V	±20V	5900 pF @ 50 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-1
BUK964R8-60E,118 MOSFET N-CH 60V 100A D2PAK Nexperia USA Inc.	1,843	-	RFQ	برگه مشخصات	TrenchMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	5V	4.4mOhm @ 25A, 10V	2.1V @ 1mA	65 nC @ 5 V	±10V	9710 pF @ 25 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK
FQA38N30 MOSFET N-CH 300V 38.4A TO3P onsemi	3,628	-	RFQ	برگه مشخصات	QFET®	TO-3P-3, SC-65-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	300 V	38.4A (Tc)	10V	85mOhm @ 19.2A, 10V	5V @ 250µA	120 nC @ 10 V	±30V	4400 pF @ 25 V	-	290W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
FQB25N33TM-F085 MOSFET N-CH 330V 25A D2PAK onsemi	7,700	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	330 V	25A (Tc)	10V	230mOhm @ 12.5A, 10V	5V @ 250µA	75 nC @ 15 V	±30V	2010 pF @ 25 V	-	3.1W (Ta), 250W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)
RJL5013DPP-00#T2 N-CHANNEL POWER MOSFET Renesas Electronics Corporation	2,536	-	RFQ	برگه مشخصات	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA320N20NM3SXKSA1 MOSFET N-CH 200V 26A TO220 Infineon Technologies	2,238	-	RFQ	برگه مشخصات	OptiMOS™ 3	TO-220-3 Full Pack	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	32mOhm @ 26A, 10V	4V @ 89µA	30 nC @ 10 V	±20V	2300 pF @ 100 V	-	38W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220 Full Pack
IPB049NE7N3GATMA1 MOSFET N-CH 75V 80A D2PAK Infineon Technologies	1,895	-	RFQ	برگه مشخصات	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	80A (Tc)	10V	4.9mOhm @ 80A, 10V	3.8V @ 91µA	68 nC @ 10 V	±20V	4750 pF @ 37.5 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
2SK3109-AZ N-CHANNEL POWER MOSFET Renesas Electronics Corporation	4,900	-	RFQ	برگه مشخصات	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFIZ34GPBF MOSFET N-CH 60V 20A TO220-3 Vishay Siliconix	1,652	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	20A (Tc)	10V	50mOhm @ 12A, 10V	4V @ 250µA	46 nC @ 10 V	±20V	1200 pF @ 25 V	-	42W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
2SK1460LS N-CHANNEL SILICON MOSFET Sanyo	600	-	RFQ	برگه مشخصات	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT035N12T MOSFET N-CH 120V 180A TO-220 Goford Semiconductor	574	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	180A (Tc)	10V	3.8mOhm @ 50A, 10V	4V @ 250µA	116 nC @ 10 V	±20V	8336 pF @ 60 V	-	230W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
BFL4001 MOSFET N-CH 900V 4.1A TO220FI onsemi	9,617	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack	Bag	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	4.1A (Ta)	10V	2.7Ohm @ 3.25A, 10V	-	44 nC @ 10 V	±30V	850 pF @ 30 V	-	2W (Ta), 37W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FI(LS)
SIHP18N50C-E3 MOSFET N-CH 500V 18A TO220AB Vishay Siliconix	499	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	18A (Tc)	10V	270mOhm @ 10A, 10V	5V @ 250µA	76 nC @ 10 V	±30V	2942 pF @ 25 V	-	223W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB