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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
FCPF165N65S3R0L FCPF165N65S3R0L - POWER MOSFET, Fairchild Semiconductor	11,630	-	RFQ	برگه مشخصات	SuperFET® III	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	19A (Tc)	10V	165mOhm @ 9.5A, 10V	4.5V @ 410µA	35 nC @ 10 V	±30V	1415 pF @ 400 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3
FDP8442-F085 POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	750	-	RFQ	برگه مشخصات	PowerTrench®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	23A (Ta), 80A (Tc)	10V	3.1mOhm @ 80A, 10V	4V @ 250µA	235 nC @ 10 V	±20V	12200 pF @ 25 V	-	254W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220-3
GC20N65F MOSFET N-CH 650V 20A TO-220F Goford Semiconductor	20,000	-	RFQ	برگه مشخصات	Cool MOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	-	20A (Tc)	10V	190mOhm @ 10A, 10V	4V @ 250µA	-	±30V	-	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
IRF6646TRPBF IRF6646 - 12V-300V N-CHANNEL POW International Rectifier	232,056	-	RFQ	برگه مشخصات	HEXFET®	DirectFET™ Isometric MN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	12A (Ta), 68A (Tc)	10V	9.5mOhm @ 12A, 10V	4.9V @ 150µA	50 nC @ 10 V	±20V	2060 pF @ 25 V	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MN
2SK3402-ZK-E1-AY 2SK3402-ZK-E1-AY - SWITCHING N-C Renesas	17,500	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	36A (Tc)	4V, 10V	15mOhm @ 18A, 10V	2.5V @ 1mA	61 nC @ 10 V	±20V	3200 pF @ 10 V	-	1W (Ta), 40W (Tc)	150°C	-	-	Surface Mount	TO-252 (MP-3Z)
FCPF9N60NT POWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor	1,700	-	RFQ	برگه مشخصات	SuperMOS™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	385mOhm @ 4.5A, 10V	4V @ 250µA	29 nC @ 10 V	±30V	1240 pF @ 100 V	-	29.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3
GT023N10M MOSFET N-CH 100V 226A TO-263 Goford Semiconductor	1,600	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	226A (Tc)	10V	2.7mOhm @ 20A, 10V	4.3V @ 250µA	121 nC @ 10 V	±20V	8050 pF @ 50 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
PSMN2R0-60ES,127 NEXPERIA PSMN2R0-60ES - 120A, 60 NXP Semiconductors	7,334	-	RFQ	برگه مشخصات	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	2.2mOhm @ 25A, 10V	4V @ 1mA	137 nC @ 10 V	±20V	9997 pF @ 30 V	-	338W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
NVB5405NT4G NVB5405 - SINGLE N-CHANNEL POWER onsemi	5,600	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	16.5A (Ta), 116A (Tc)	5V, 10V	5.8mOhm @ 40A, 10V	3.5V @ 250µA	88 nC @ 10 V	±20V	4000 pF @ 32 V	-	3W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
2SK4084LS 2SK4084LS - MOSFET, T14A, 500V, Sanyo	2,000	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	9.6A (Tc)	-	520mOhm @ 7A, 10V	-	38.4 nC @ 10 V	-	1000 pF @ 30 V	-	2W (Ta), 37W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FI(LS)
2SK4084LS 2SK4084LS - MOSFET, T14A, 500V, onsemi	941	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	9.6A (Tc)	-	520mOhm @ 7A, 10V	-	38.4 nC @ 10 V	-	1000 pF @ 30 V	-	2W (Ta), 37W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FI(LS)
NTD5C684NLT4G MOSFET N-Channel 60V 10A (Ta), 2 Flip Electronics	29,129	-	RFQ	-	-	-	Tape & Reel (TR)	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCP380N60E MOSFET N-CH 600V 10.2A TO220-3 Fairchild Semiconductor	25,166	-	RFQ	برگه مشخصات	SuperFET® II	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	10.2A (Tc)	10V	380mOhm @ 5A, 10V	3.5V @ 250µA	45 nC @ 10 V	±20V	1770 pF @ 25 V	-	106W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
AUIRF4104STRL MOSFET N-CH 40V 75A D2PAK International Rectifier	456	-	RFQ	برگه مشخصات	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	-	5.5mOhm @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	-	3000 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
FQI13N50CTU POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	13,185	-	RFQ	برگه مشخصات	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	13A (Tc)	10V	480mOhm @ 6.5A, 10V	4V @ 250µA	56 nC @ 10 V	±30V	2055 pF @ 25 V	-	195W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262 (I2PAK)
GT070N15T MOSFET N-CH 150V 140A 320W 5.8m( Goford Semiconductor	4,000	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	140A (Tc)	10V	5.8mOhm @ 30A, 10V	4V @ 250µA	89 nC @ 10 V	±20V	5864 pF @ 75 V	-	320W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
HUF75545P3 N-CHANNEL ULTRAFET POWER MOSFET Fairchild Semiconductor	900	-	RFQ	برگه مشخصات	UltraFET™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	75A (Tc)	10V	10mOhm @ 75A, 10V	4V @ 250µA	235 nC @ 20 V	±20V	3750 pF @ 25 V	-	270W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
GT023N10TL MOSFET N-CH 100V 330A TOLL-8 Goford Semiconductor	4,000	-	RFQ	برگه مشخصات	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	330A (Tc)	10V	1.9mOhm @ 80A, 10V	3.8V @ 250µA	121 nC @ 10 V	±20V	8058 pF @ 50 V	-	395W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLL
MTW8N50E TRANS MOSFET N-CH 500V 8A 3-PIN( Motorola	13,887	-	RFQ	برگه مشخصات	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK1445LS 2SK1445 - N-CHANNEL SILICON MOSF Sanyo	6,000	-	RFQ	برگه مشخصات	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-