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FET، ماسفت

عکس شماره قطعه تولیدکننده موجودی قیمت تعداد برگه مشخصات سری بسته / کیس بسته بندی وضعیت محصول نوع FET تکنولوژی تخلیه به ولتاژ منبع (Vdss) جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن) Rds روشن (حداکثر) @ ID، Vgs Vgs(th) (Max) @ ID شارژ دروازه (Qg) (حداکثر) @ Vgs Vgs (حداکثر) ظرفیت ورودی (Ciss) (حداکثر) @ Vds ویژگی FET اتلاف نیرو (حداکثر) دمای عملیاتی درجه صلاحیت نوع نصب بسته دستگاه تامین کننده
2SK3431-AZ

2SK3431-AZ

2SK3431-AZ - SWITCHING N-CHANNEL

Renesas

554
RFQ
2SK3431-AZ

برگه مشخصات

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40 V 83A (Tc) 4V, 10V 5.6mOhm @ 42A, 10V 2.5V @ 1mA 110 nC @ 10 V ±20V 6100 pF @ 10 V - 1.5W (Ta), 100W (Tc) 150°C - - Through Hole TO-220AB
RJK6012DPP-E0#T2

RJK6012DPP-E0#T2

RJK6012DPP - N CHANNEL MOSFET

Renesas

3,960
RFQ
RJK6012DPP-E0#T2

برگه مشخصات

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 920mOhm @ 5A, 10V 4.5V @ 1mA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 30W (Ta) 150°C - - Through Hole TO-220FP
RJK5026DPP-E0#T2

RJK5026DPP-E0#T2

RJK5026DPP-E0#T2 - SILICON N CHA

Renesas

4,876
RFQ
RJK5026DPP-E0#T2

برگه مشخصات

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.7Ohm @ 3A, 10V 4.5V @ 1mA 14 nC @ 10 V ±30V 440 pF @ 25 V - 28.5W (Tc) 150°C - - Through Hole TO-220FP
FDI038AN06A0

FDI038AN06A0

MOSFET N-CH 60V 17A/80A I2PAK

Fairchild Semiconductor

1,432
RFQ
FDI038AN06A0

برگه مشخصات

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 124 nC @ 10 V ±20V 6400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
2SK2461-AZ

2SK2461-AZ

2SK2461 - SILICON N CHANNEL MOSF

Renesas

1,760
RFQ
2SK2461-AZ

برگه مشخصات

- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 4V, 10V 80mOhm @ 10A, 10V 2V @ 1mA 51 nC @ 10 V ±20V 1400 pF @ 10 V - 2W (Ta), 35W (Tc) 150°C - - Through Hole ITO-220AB
AUIRFS4115-7TRL

AUIRFS4115-7TRL

MOSFET_(120V,300V)

Infineon Technologies

662
RFQ
AUIRFS4115-7TRL

برگه مشخصات

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
NTMFS5C612NLT1G-01

NTMFS5C612NLT1G-01

N-Channel 60 V 36A (Ta), 235A (T

Flip Electronics

124,500
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
AUIRFP4409

AUIRFP4409

MOSFET N-CH 300V 38A TO247AC

International Rectifier

8,924
RFQ
AUIRFP4409

برگه مشخصات

HEXFET® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
AUIRFS4115-7P

AUIRFS4115-7P

AUIRFS4115 - 120V-300V N-CHANNEL

Infineon Technologies

35,170
RFQ
AUIRFS4115-7P

برگه مشخصات

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
AUIRFS4115-7P

AUIRFS4115-7P

AUIRFS4115 - 120V-300V N-CHANNEL

International Rectifier

323
RFQ
AUIRFS4115-7P

برگه مشخصات

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
FCH170N60

FCH170N60

MOSFET N-CH 600V 22A TO247-3

Fairchild Semiconductor

11,671
RFQ
FCH170N60

برگه مشخصات

SuperFET® II TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 170mOhm @ 11A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 2860 pF @ 380 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
AUIRFB8405

AUIRFB8405

AUIRFB8405 - 20V-40V N-CHANNEL A

International Rectifier

14,950
RFQ
AUIRFB8405

برگه مشخصات

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.5mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
FCP104N60

FCP104N60

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

129
RFQ
FCP104N60

برگه مشخصات

SuperFET® II TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 104mOhm @ 18.5A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 4165 pF @ 380 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
2SK1449

2SK1449

2SK1449 - N-CHANNEL SILICON MOSF

onsemi

775
RFQ
2SK1449

برگه مشخصات

* - Bulk Active - - - - - - - - - - - - - - - - -
FL06320G

FL06320G

SICFET N-CH 650V 8.8A PDFN8x8

fastSiC

300
RFQ
FL06320G

برگه مشخصات

Lightning 4-PowerTSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 8.8A (Tc) 15V 320mOhm @ 2A, 15V 1.5V @ 4mA 14.5 nC @ 12 V 15V 344 pF @ 400 V - 41W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 4-PDFN (8x8)
AUIRFP4004

AUIRFP4004

MOSFET N-CH 40V 195A TO247AC

International Rectifier

152
RFQ
AUIRFP4004

برگه مشخصات

HEXFET® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.7mOhm @ 195A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 8920 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
FCPF290N80

FCPF290N80

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

7,634
RFQ
FCPF290N80

برگه مشخصات

PowerTrench® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75 nC @ 10 V ±20V 3205 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
AUIRLS3034-7TRL

AUIRLS3034-7TRL

MOSFET N-CH 40V 240A D2PAK

International Rectifier

2,280
RFQ
AUIRLS3034-7TRL

برگه مشخصات

HEXFET® TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
AUIRF1404S

AUIRF1404S

MOSFET N-CH 40V 75A D2PAK

International Rectifier

22,531
RFQ
AUIRF1404S

برگه مشخصات

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
2SK3455B-S17-AY

2SK3455B-S17-AY

2SK3455B - SWITCHING N-CHANNEL P

Renesas

1,000
RFQ

-

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 600mOhm @ 6A, 10V 3.5V @ 1mA 30 nC @ 10 V ±30V 1800 pF @ 10 V - 2W (Ta), 50W (Tc) 150°C - - Through Hole ITO-220 (MP-45F)
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