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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
GS65R030Q4A SiC MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	5,000	-	RFQ	برگه مشخصات	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4L
GS65R045Q4A SiC MOSFET N-CH 650V 51A TO-247 Goford Semiconductor	5,000	-	RFQ	برگه مشخصات	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4L
MT9M131C12STC-MI-DR CMOS IMAGE SENSOR SYSTEM-ON-CHIP onsemi	3,040	-	RFQ	برگه مشخصات	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AC3M0015065K SIC MOSFET N-CH 650V 122A TO247- APSEMI	10,000	-	RFQ	برگه مشخصات	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	122A (Tc)	15V	21mOhm @ 55.8A, 15V	3.6V @ 15.5mA	-	+19V, -8V	-	-	416W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0015065D SIC MOSFET N-CH 650V 122A TO247- APSEMI	10,000	-	RFQ	برگه مشخصات	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	122A (Tc)	15V	21mOhm @ 55.8A, 15V	3.6V @ 15.5mA	-	+19V, -8V	-	-	416W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
GS120R033Q4A SiC MOSFET N-CH 1200V 69A TO-24 Goford Semiconductor	5,000	-	RFQ	برگه مشخصات	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4L
GS120R040Q4 SiC MOSFET N-CH 1200V 50A TO-24 Goford Semiconductor	5,000	-	RFQ	برگه مشخصات	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-4L
FF06030Q SICFET N-CH 650V 65A TO-247-4L fastSiC	300	-	RFQ	-	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	65A (Tc)	18V	45mOhm @ 30A, 18V	2.2V @ 40mA	125 nC @ 15 V	+18V, -8V	3015 pF @ 400 V	-	202W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF06030J-7A SICFET N-CH 650V 74A TO-263-7L fastSiC	300	-	RFQ	برگه مشخصات	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	74A (Tc)	18V	45mOhm @ 30A, 18V	2.5V @ 40mA	125 nC @ 15 V	18V	3015 pF @ 400 V	-	268W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7L
FF06030FA SICFET N-CH 650V 74A TOLL fastSiC	300	-	RFQ	برگه مشخصات	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	74A (Tc)	18V	45mOhm @ 30A, 18V	2.5V @ 40mA	125 nC @ 15 V	18V	3015 pF @ 400 V	-	268W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
FF06030J-7 SICFET N-CH 650V 62A TO-263-7L fastSiC	300	-	RFQ	برگه مشخصات	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	62A (Tc)	15V, 18V	45mOhm @ 30A, 18V	2.5V @ 40mA (Typ)	125 nC @ 400 V	+18V, -8V	3015 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7L
FF07035FA SICFET N-CH 750V 61A TOLL fastSiC	300	-	RFQ	-	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	61A (Tc)	18V	48mOhm @ 22A, 18V	2.5V @ 40mA	112 nC @ 15 V	+18V, -8V	2818 pF @ 500 V	-	267W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TOLL
FF07035J-7A SICFET N-CH 750V 61A TO-263-7L fastSiC	300	-	RFQ	-	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	61A (Tc)	18V	48mOhm @ 22A, 18V	2.5V @ 40mA	112 nC @ 15 V	+18V, -8V	2818 pF @ 500 V	-	267W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-263-7L
FF07035QA SICFET N-CH 750V 62A TO-247-4L fastSiC	300	-	RFQ	-	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	62A (Tc)	18V	48mOhm @ 22A, 18V	2.5V @ 40mA	112 nC @ 15 V	+18V, -8V	2818 pF @ 500 V	-	277W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF06030QA SICFET N-CH 650V 75A TO-247-4L fastSiC	300	-	RFQ	-	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	75A (Tc)	18V	45mOhm @ 30A, 18V	2.5V @ 40mA	125 nC @ 15 V	+18V, -8V	3015 pF @ 400 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	-	TO-247-4L
FF07035E-3A SICFET N-CH 750V 62A TO-247-3L fastSiC	300	-	RFQ	-	Falcon	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	62A (Tc)	18V	48mOhm @ 22A, 18V	2.5V @ 40mA	112 nC @ 15 V	+18V, -8V	2818 pF @ 500 V	-	277W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-3L
FF06030E-3A SICFET N-CH 650V 75A TO-247-3L fastSiC	300	-	RFQ	برگه مشخصات	Falcon	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	75A (Tc)	15V, 18V	45mOhm @ 30A, 18V	2.2V @ 40mA (Typ)	125 nC @ 400 V	+18V, -8V	3015 pF @ 400 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3L
FF12040QA SICFET N-CH 1200V 54A TO-247-4L fastSiC	300	-	RFQ	-	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	54A (Tc)	18V	56mOhm @ 20A, 18V	2.2V @ 40mA	117 nC @ 15 V	+18V, -8V	3129 pF @ 800 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
AC3M0016120K SIC MOSFET N-CH 1200V 117A TO247 APSEMI	10,000	-	RFQ	برگه مشخصات	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	117A (Tc)	15V	22.3mOhm @ 75A, 15V	3.6V @ 23mA	-	+19V, -8V	-	-	556W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0016120D SIC MOSFET N-CH 1200V 117A TO247 APSEMI	10,000	-	RFQ	برگه مشخصات	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	117A (Tc)	15V	22.3mOhm @ 75A, 15V	3.6V @ 23mA	-	+19V, -8V	-	-	556W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3