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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
IXFY8N65X2 MOSFET N-CH 650V 8A TO252AA IXYS	50	-	RFQ	برگه مشخصات	HiPerFET™, Ultra X2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	8A (Tc)	10V	450mOhm @ 4A, 10V	5V @ 250µA	11 nC @ 10 V	±30V	790 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
TSM5NC50CZ C0G MOSFET N-CHANNEL 500V 5A TO220 Taiwan Semiconductor Corporation	671	-	RFQ	-	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	5A (Tc)	10V	1.38Ohm @ 2.5A, 10V	4.5V @ 250µA	15 nC @ 10 V	±30V	586 pF @ 50 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
MCQ12N10Y-TP N-CHANNEL MOSFET,SOP-8 Micro Commercial Co	68	-	RFQ	برگه مشخصات	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	12A	10V	17mOhm @ 10A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	1135 pF @ 50 V	-	3.1W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
SIR460DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix	45	-	RFQ	برگه مشخصات	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	40A (Tc)	4.5V, 10V	4.7mOhm @ 15A, 10V	2.4V @ 250µA	54 nC @ 10 V	±20V	2071 pF @ 15 V	-	5W (Ta), 48W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
TK380A60Y,S4X MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	43	-	RFQ	برگه مشخصات	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Tc)	10V	380mOhm @ 4.9A, 10V	4V @ 360µA	20 nC @ 10 V	±30V	590 pF @ 300 V	-	30W	150°C (TJ)	-	-	Through Hole	TO-220SIS
IXTU8N70X2 MOSFET N-CH 700V 8A TO251-3 IXYS	64	-	RFQ	برگه مشخصات	Ultra X2	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	700 V	8A (Tc)	10V	500mOhm @ 500mA, 10V	4.5V @ 250µA	12 nC @ 10 V	±30V	800 pF @ 10 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251-3
SIHP15N80AE-GE3 MOSFET N-CH 800V 13A TO220AB Vishay Siliconix	95	-	RFQ	برگه مشخصات	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	13A (Tc)	10V	350mOhm @ 7.5A, 10V	4V @ 250µA	53 nC @ 10 V	±30V	1093 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IXTP8N70X2 MOSFET N-CH 700V 8A TO220-3 IXYS	28	-	RFQ	برگه مشخصات	Ultra X2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	700 V	8A (Tc)	10V	500mOhm @ 500mA, 10V	5V @ 250µA	12 nC @ 10 V	±30V	800 pF @ 10 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
SI7806ADN-T1-E3 MOSFET N-CH 30V 9A PPAK1212-8 Vishay Siliconix	85	-	RFQ	برگه مشخصات	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4.5V, 10V	11mOhm @ 14A, 10V	3V @ 250µA	20 nC @ 5 V	±20V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8
STU3N62K3 MOSFET N-CH 620V 2.7A IPAK STMicroelectronics	45	-	RFQ	برگه مشخصات	SuperMESH3™	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	620 V	2.7A (Tc)	10V	2.5Ohm @ 1.4A, 10V	4.5V @ 50µA	13 nC @ 10 V	±30V	385 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK5R1A08QM,S4X UMOS10 TO-220SIS 80V 5.1MOHM Toshiba Semiconductor and Storage	43	-	RFQ	برگه مشخصات	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	70A (Tc)	6V, 10V	5.1mOhm @ 35A, 10V	3.5V @ 700µA	54 nC @ 10 V	±20V	3980 pF @ 40 V	-	45W (Tc)	175°C	-	-	Through Hole	TO-220SIS
TK34E10N1,S1X MOSFET N-CH 100V 75A TO220 Toshiba Semiconductor and Storage	35	-	RFQ	برگه مشخصات	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	75A (Tc)	10V	9.5mOhm @ 17A, 10V	4V @ 500µA	38 nC @ 10 V	±20V	2600 pF @ 50 V	-	103W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
DMTH6010SCT MOSFET N-CH 60V 100A TO220-3 Diodes Incorporated	51	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	7.2mOhm @ 20A, 10V	4V @ 250µA	36.3 nC @ 10 V	±20V	1940 pF @ 30 V	-	2.8W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220-3
TK7A60W5,S5VX MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	46	-	RFQ	برگه مشخصات	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Ta)	10V	650mOhm @ 3.5A, 10V	4.5V @ 350µA	16 nC @ 10 V	±30V	490 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IXTP2N65X2 MOSFET N-CH 650V 2A TO220 Littelfuse Inc.	66	-	RFQ	برگه مشخصات	Ultra X2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	2A (Tc)	10V	2.3Ohm @ 1A, 10V	5V @ 250µA	4.3 nC @ 10 V	±30V	180 pF @ 25 V	-	55W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
STP5N95K5 MOSFET N-CH 950V 3.5A TO220 STMicroelectronics	876	-	RFQ	برگه مشخصات	SuperMESH5™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	950 V	3.5A (Tc)	10V	2.5Ohm @ 1.5A, 10V	5V @ 100µA	12.5 nC @ 10 V	±30V	220 pF @ 100 V	-	70W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
R6004ENX MOSFET N-CH 600V 4A TO220FM Rohm Semiconductor	97	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack	Bulk	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	4A (Tc)	10V	980mOhm @ 1.5A, 10V	4V @ 1mA	15 nC @ 10 V	±20V	250 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FM
IXFP20N50P3M MOSFET N-CH 500V 8A TO220AB IXYS	57	-	RFQ	برگه مشخصات	HiPerFET™, Polar3™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	8A (Tc)	10V	300mOhm @ 10A, 10V	5V @ 1.5mA	36 nC @ 10 V	±30V	1800 pF @ 25 V	-	58W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXFP110N15T2 MOSFET N-CH 150V 110A TO220AB IXYS	50	-	RFQ	برگه مشخصات	HiPerFET™, TrenchT2™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	110A (Tc)	10V	13mOhm @ 55A, 10V	4.5V @ 250µA	150 nC @ 10 V	±20V	8600 pF @ 25 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
TK380A65Y,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	87	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	9.7A (Tc)	10V	380mOhm @ 4.9A, 10V	4V @ 360µA	20 nC @ 10 V	±30V	590 pF @ 300 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220SIS