جستجوی داغ PT380220 900-53651-0000-000 900-5G172-2240-000 900-5G172-2540-000 900-5G178-2250-000 900-52061-0000-000 940-54242-0006-000 900-13448-0020-000 EAPLP05RDQA0 EAC28FSLN

در دسترس ۲۴/۷ در

+86 13632816717

خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
S2M0025120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	46	-	RFQ	برگه مشخصات	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	70A (Tj)	20V	34mOhm @ 50A, 20V	4V @ 15mA	177 nC @ 20 V	+25V, -10V	4150 pF @ 1000 V	-	311W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
SCT025H120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	85	-	RFQ	برگه مشخصات	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT018H65G3AG H2PAK-7 STMicroelectronics	100	-	RFQ	برگه مشخصات	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	15V, 18V	27mOhm @ 30A, 18V	4.2V @ 5mA	79.4 nC @ 18 V	+22V, -10V	2124 pF @ 400 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7
S2M0080120N MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	-	RFQ	برگه مشخصات	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+20V, -5V	1324 pF @ 1000 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
SCT018W65G3-4AG TO247-4 STMicroelectronics	100	-	RFQ	برگه مشخصات	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	55A (Tc)	15V, 18V	27mOhm @ 30A, 18V	4.2V @ 5mA	77 nC @ 18 V	+22V, -10V	2077 pF @ 400 V	-	398W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
SCT025W120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	100	-	RFQ	برگه مشخصات	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT025W120G3-4AG TO247-4 STMicroelectronics	75	-	RFQ	برگه مشخصات	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	15V, 18V	37mOhm @ 25A, 18V	4.2V @ 5mA	73 nC @ 18 V	+18V, -5V	1990 pF @ 800 V	-	388W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
MSC015SMA070B4N MOSFET SIC 700 V 15 MOHM TO-247- Microchip Technology	60	-	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	700 V	112A (Tc)	18V, 20V	19mOhm @ 40A, 20V	5V @ 4mA	215 nC @ 20 V	+23V, -10V	4324 pF @ 700 V	-	524W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
SCT012W90G3-4AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	100	-	RFQ	-	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S2M0040120N-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	-	RFQ	برگه مشخصات	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	92.1 nC @ 20 V	+20V, -5V	1904 pF @ 1000 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
SCT011HU75G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	50	-	RFQ	برگه مشخصات	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC017SMA120B4N MOSFET SIC 1200 V 17 MOHM TO-247 Microchip Technology	30	-	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	119A (Tc)	18V, 20V	22mOhm @ 40A, 20V	5V @ 4.5mA	194 nC @ 20 V	+23V, -10V	4274 pF @ 1200 V	-	577W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
MSC025SMA120B4N MOSFET SIC 1200 V 25 MOHM TO-247 Microchip Technology	30	-	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	113A (Tc)	18V, 20V	31mOhm @ 40A, 20V	5V @ 3mA	232 nC @ 20 V	+23V, -10V	3633 pF @ 1000 V	-	577W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
S3M0040120N MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	-	RFQ	برگه مشخصات	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+20V, -8V	2844 pF @ 1000 V	-	483W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
IXTH1N300P3HV MOSFET N-CH 3000V 1A TO247HV Littelfuse Inc.	8	-	RFQ	برگه مشخصات	Polar P3™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3000 V	1A (Tc)	10V	50Ohm @ 500mA, 10V	4V @ 250µA	30.6 nC @ 10 V	±20V	895 pF @ 25 V	-	195W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247HV
AIMZHN120R020M1TXKSA1 SIC_DISCRETE Infineon Technologies	30	-	RFQ	برگه مشخصات	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	18V, 20V	25mOhm @ 43A, 20V	5.1V @ 13.7mA	82 nC @ 20 V	+23V, -5V	2667 pF @ 800 V	-	429W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-14
DMWSH120H28SM4Q SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	38	-	RFQ	برگه مشخصات	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	15V	28.5mOhm @ 50A, 15V	3.6V @ 17.7mA	156.3 nC @ 15 V	+19V, -8V	-	-	429W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
S2M0025120N MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	34	-	RFQ	برگه مشخصات	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	104A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	165 nC @ 20 V	+20V, -5V	4054 pF @ 1000 V	-	535W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
TM3B0020120A 1200V 20MOHM SIC MOSFET TO247-4 Coherent Corp	40	-	RFQ	برگه مشخصات	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S3M0016120N MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	-	RFQ	برگه مشخصات	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	120A (Tc)	18V	23mOhm @ 75A, 18V	4V @ 30mA	287 nC @ 18 V	+22V, -8V	5251 pF @ 1000 V	-	732W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227