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شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
BSS84XHZGG2CR MOSFET P-CH 60V 230MA DFN1010-3W Rohm Semiconductor	5,345	-	RFQ	برگه مشخصات	-	3-XFDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	230mA (Ta)	-	5.3Ohm @ 230mA, 10V	2.5V @ 100µA	-	±20V	34 pF @ 30 V	-	1W (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	DFN1010-3W
RQ6E035TNTR MOSFET N-CH 30V 3.5A TSMT6 Rohm Semiconductor	9,664	-	RFQ	برگه مشخصات	-	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	2.5V, 4.5V	54mOhm @ 3.5A, 4.5V	1.5V @ 1mA	6.4 nC @ 4.5 V	±12V	285 pF @ 10 V	-	950mW (Ta)	150°C (TJ)	-	-	Surface Mount	TSMT6 (SC-95)
STL7N6F7 MOSFET N-CH 60V 7A POWERFLAT STMicroelectronics	6,283	-	RFQ	برگه مشخصات	STripFET™	6-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7A (Tc)	10V	25mOhm @ 3.5A, 10V	4V @ 250µA	8 nC @ 10 V	±20V	450 pF @ 25 V	-	2.4W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerFlat™ (2x2)
TK4K1A60F,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	7	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2A (Ta)	10V	4.1Ohm @ 1A, 10V	4V @ 190µA	8 nC @ 10 V	±30V	270 pF @ 300 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220SIS
SIR836DP-T1-GE3 MOSFET N-CH 40V 21A PPAK SO-8 Vishay Siliconix	8,425	-	RFQ	برگه مشخصات	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	21A (Tc)	4.5V, 10V	19mOhm @ 10A, 10V	2.5V @ 250µA	18 nC @ 10 V	±20V	600 pF @ 20 V	-	3.9W (Ta), 15.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
CPC3708ZTR MOSFET N-CH 350V 5MA SOT223 Littelfuse Inc.	5,275	-	RFQ	برگه مشخصات	-	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	350 V	5mA (Ta)	0.35V	14Ohm @ 50mA, 350mV	-	-	±20V	300 pF @ 0 V	-	2.5W (Ta)	-40°C ~ 110°C (TA)	-	-	Surface Mount	SOT-223
SISA72DN-T1-GE3 MOSFET N-CH 40V 60A PPAK1212-8 Vishay Siliconix	7,101	-	RFQ	برگه مشخصات	TrenchFET® Gen IV	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	3.5mOhm @ 10A, 10V	2.4V @ 250µA	30 nC @ 4.5 V	+20V, -16V	3240 pF @ 20 V	-	52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8
SIS488DN-T1-GE3 MOSFET N-CH 40V 40A PPAK1212-8 Vishay Siliconix	9,682	-	RFQ	برگه مشخصات	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	40A (Tc)	4.5V, 10V	5.5mOhm @ 20A, 10V	2.2V @ 250µA	32 nC @ 10 V	±20V	1330 pF @ 20 V	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8
TK40E06N1,S1X MOSFET N-CH 60V 40A TO220 Toshiba Semiconductor and Storage	23	-	RFQ	برگه مشخصات	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	40A (Ta)	10V	10.4mOhm @ 20A, 10V	4V @ 300µA	23 nC @ 10 V	±20V	1700 pF @ 30 V	-	67W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
IPA70R600P7SXKSA1 MOSFET N-CH 700V 8.5A TO220 Infineon Technologies	9,108	-	RFQ	برگه مشخصات	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	700 V	8.5A (Tc)	10V	600mOhm @ 1.8A, 10V	3.5V @ 90µA	10.5 nC @ 10 V	±16V	364 pF @ 400 V	-	25W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-FP
TK1K2A60F,S4X MOSFET N-CH 600V 6A TO220SIS Toshiba Semiconductor and Storage	6,491	-	RFQ	برگه مشخصات	U-MOSIX	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6A (Ta)	10V	1.2Ohm @ 3A, 10V	4V @ 630µA	21 nC @ 10 V	±30V	740 pF @ 300 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220SIS
DMT4004LPS-13 MOSFET N-CH 40V 26A PWRDI5060 Diodes Incorporated	3,135	-	RFQ	برگه مشخصات	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	26A (Ta), 90A (Tc)	4.5V, 10V	2.5mOhm @ 50A, 10V	3V @ 250µA	82.2 nC @ 10 V	±20V	4508 pF @ 20 V	-	2.6W (Ta), 138W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerDI5060-8
STD96N3LLH6 MOSFET N-CH 30V 80A DPAK STMicroelectronics	2,202	-	RFQ	برگه مشخصات	DeepGATE™, STripFET™ VI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	80A (Tc)	5.5V, 10V	4.2mOhm @ 40A, 10V	2.5V @ 250µA	20 nC @ 4.5 V	±20V	2200 pF @ 25 V	-	70W (Tc)	175°C (TJ)	-	-	Surface Mount	DPAK
TK6R8A08QM,S4X UMOS10 TO-220SIS 80V 6.8MOHM Toshiba Semiconductor and Storage	19	-	RFQ	برگه مشخصات	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	58A (Tc)	6V, 10V	6.8mOhm @ 29A, 10V	3.5V @ 500µA	39 nC @ 10 V	±20V	2700 pF @ 40 V	-	41W (Tc)	175°C	-	-	Through Hole	TO-220SIS
BSC0503NSIATMA1 MOSFET N-CH 30V 22A/88A TDSON Infineon Technologies	7,607	-	RFQ	برگه مشخصات	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	22A (Ta), 88A (Tc)	4.5V, 10V	3mOhm @ 30A, 10V	2V @ 250µA	20 nC @ 10 V	±20V	1300 pF @ 15 V	-	2.5W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-6
TK110E10PL,S1X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	5,429	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	4.5V, 10V	10.7mOhm @ 21A, 10V	2.5V @ 300µA	33 nC @ 10 V	±20V	2040 pF @ 50 V	-	87W (Tc)	175°C	-	-	Through Hole	TO-220
TK22A10N1,S4X MOSFET N-CH 100V 22A TO220SIS Toshiba Semiconductor and Storage	1	-	RFQ	برگه مشخصات	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	22A (Tc)	10V	13.8mOhm @ 11A, 10V	4V @ 300µA	28 nC @ 10 V	±20V	1800 pF @ 50 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
SIHA5N80AE-GE3 E SERIES POWER MOSFET THIN-LEAD Vishay Siliconix	2,322	-	RFQ	برگه مشخصات	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	3A (Tc)	10V	1.35Ohm @ 1.5A, 10V	4V @ 250µA	16.5 nC @ 10 V	±30V	321 pF @ 100 V	-	29W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack
IPA041N04NGXKSA1 MOSFET N-CH 40V 70A TO220-FP Infineon Technologies	10	-	RFQ	برگه مشخصات	OptiMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	10V	4.1mOhm @ 70A, 10V	4V @ 45µA	56 nC @ 10 V	±20V	4500 pF @ 20 V	-	35W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-FP
TK42A12N1,S4X MOSFET N-CH 120V 42A TO220SIS Toshiba Semiconductor and Storage	9,325	-	RFQ	برگه مشخصات	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	42A (Tc)	10V	9.4mOhm @ 21A, 10V	4V @ 1mA	52 nC @ 10 V	±20V	3100 pF @ 60 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS