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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
RS6R060BHTB1 NCH 150V 60A, HSOP8, POWER MOSFE Rohm Semiconductor	4,755	-	RFQ	برگه مشخصات	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	60A (Tc)	6V, 10V	21.8mOhm @ 60A, 10V	4V @ 1mA	46 nC @ 10 V	±20V	2750 pF @ 75 V	-	104W (Tc)	150°C (TJ)	-	-	Surface Mount	8-HSOP
PSMN1R5-50YLHX PSMN1R5-50YLH/SOT1023/4 LEADS Nexperia USA Inc.	4,205	-	RFQ	برگه مشخصات	-	SOT-1023, 4-LFPAK	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200A (Tc)	4.5V, 10V	1.75mOhm @ 25A, 10V	2.2V @ 1mA	181 nC @ 10 V	±20V	11143 pF @ 25 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8
IXTP48N20T MOSFET N-CH 200V 48A TO220AB Littelfuse Inc.	938	-	RFQ	برگه مشخصات	Trench	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	50mOhm @ 24A, 10V	4.5V @ 250µA	60 nC @ 10 V	±30V	3000 pF @ 25 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
EPC2069 GAN FET 40V .002OHM 8BUMP DIE EPC	7,700	-	RFQ	برگه مشخصات	-	-	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	-	-	-	-	-	+6V, -4V	-	-	-	-	-	-	-	-
R8006KNXC7G HIGH-SPEED SWITCHING NCH 800V 6A Rohm Semiconductor	766	-	RFQ	برگه مشخصات	-	TO-220-3 Full Pack	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	800 V	6A (Ta)	10V	900mOhm @ 3A, 10V	4.5V @ 4mA	22 nC @ 10 V	±20V	650 pF @ 100 V	-	52W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FM
IPW80R280P7XKSA1 MOSFET N-CH 800V 17A TO247-3 Infineon Technologies	252	-	RFQ	برگه مشخصات	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	280mOhm @ 7.2A, 10V	3.5V @ 360µA	36 nC @ 10 V	±20V	1200 pF @ 500 V	-	101W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41
STP21N65M5 MOSFET N-CH 650V 17A TO220AB STMicroelectronics	2,110	-	RFQ	برگه مشخصات	MDmesh™ V	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	17A (Tc)	10V	190mOhm @ 8.5A, 10V	5V @ 250µA	50 nC @ 10 V	±25V	1950 pF @ 100 V	-	125W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
STP8NK80Z MOSFET N-CH 800V 6.2A TO220AB STMicroelectronics	1,006	-	RFQ	برگه مشخصات	SuperMESH™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	6.2A (Tc)	10V	1.5Ohm @ 3.1A, 10V	4.5V @ 100µA	46 nC @ 10 V	±30V	1320 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
IXTA200N055T2 MOSFET N-CH 55V 200A TO263 Littelfuse Inc.	609	-	RFQ	برگه مشخصات	TrenchT2™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	200A (Tc)	10V	4.2mOhm @ 50A, 10V	4V @ 250µA	109 nC @ 10 V	±20V	6800 pF @ 25 V	-	360W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263AA
SUP70030E-GE3 MOSFET N-CH 100V 150A TO220AB Vishay Siliconix	384	-	RFQ	برگه مشخصات	TrenchFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	150A (Tc)	7.5V, 10V	3.18mOhm @ 30A, 10V	4V @ 250µA	214 nC @ 10 V	±20V	10870 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IXFP12N65X2M MOSFET N-CH 650V 12A TO220 Littelfuse Inc.	282	-	RFQ	برگه مشخصات	HiPerFET™, Ultra X2	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	310mOhm @ 6A, 10V	5V @ 250µA	18.5 nC @ 10 V	±30V	1134 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Isolated Tab
IRFP7537PBF MOSFET N-CH 60V 172A TO247 Infineon Technologies	211	-	RFQ	برگه مشخصات	HEXFET®, StrongIRFET™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	172A (Tc)	6V, 10V	3.3mOhm @ 100A, 10V	3.7V @ 150µA	210 nC @ 10 V	±20V	7020 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
IXFA4N100P MOSFET N-CH 1000V 4A TO263 Littelfuse Inc.	295	-	RFQ	برگه مشخصات	HiPerFET™, Polar	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	4A (Tc)	10V	3.3Ohm @ 2A, 10V	5V @ 250µA	26 nC @ 10 V	±20V	1456 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA (IXFA)
FDMS030N06B MOSFET N-CH 60V 22.1A/100A 8PQFN onsemi	4,096	-	RFQ	برگه مشخصات	PowerTrench®	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	22.1A (Ta), 100A (Tc)	10V	3mOhm @ 50A, 10V	4.5V @ 250µA	75 nC @ 10 V	±20V	7560 pF @ 30 V	-	2.5W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)
IAUS200N08S5N023ATMA1 MOSFET N-CH 80V 200A HSOG-8 Infineon Technologies	484	-	RFQ	برگه مشخصات	OptiMOS™	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	200A (Tc)	6V, 10V	2.3mOhm @ 100A, 10V	3.8V @ 130µA	110 nC @ 10 V	±20V	7670 pF @ 40 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HSOG-8-1
NVD5C434NT4G MOSFET N-CHANNEL 40V 163A DPAK onsemi	2,089	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	163A (Tc)	10V	2.1mOhm @ 50A, 10V	4V @ 250µA	80.6 nC @ 10 V	±20V	5400 pF @ 25 V	-	117W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	DPAK
IXTP48P05T MOSFET P-CH 50V 48A TO220AB Littelfuse Inc.	302	-	RFQ	برگه مشخصات	TrenchP™	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	50 V	48A (Tc)	10V	30mOhm @ 24A, 10V	4.5V @ 250µA	53 nC @ 10 V	±15V	3660 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IRF2804STRLPBF MOSFET N-CH 40V 75A D2PAK Infineon Technologies	2,529	-	RFQ	برگه مشخصات	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	2mOhm @ 75A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	6450 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
FDMC86340ET80 MOSFET N-CH 80V 14A/68A POWER33 onsemi	1,325	-	RFQ	برگه مشخصات	PowerTrench®	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	14A (Ta), 68A (Tc)	8V, 10V	6.5mOhm @ 14A, 10V	4V @ 250µA	49 nC @ 10 V	±20V	2775 pF @ 40 V	-	2.8W (Ta), 65W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	Power33
TK200F04N1L,LXGQ MOSFET N-CH 40V 200A TO220SM Toshiba Semiconductor and Storage	1,016	-	RFQ	برگه مشخصات	U-MOSVIII-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	200A (Ta)	6V, 10V	0.9mOhm @ 100A, 10V	3V @ 1mA	214 nC @ 10 V	±20V	14920 pF @ 10 V	-	375W (Tc)	175°C	-	-	Surface Mount	TO-220SM(W)

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