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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > IGBT ها > IGBT های منفرد

IGBT های منفرد

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع IGBT	ولتاژ - خرابی امیتر کلکتور (حداکثر)	فعلی - گردآورنده (IC) (حداکثر)	جریان - پالس جمع کننده (Icm)	Vce(on) (Max) @ Vge، Ic	قدرت - حداکثر	انرژی سوئیچینگ	نوع ورودی	شارژ دروازه	Td (روشن/خاموش) @ 25 درجه سانتی گراد	شرایط تست	زمان بازیابی معکوس (trr)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
FGHL75T65MQD IGBT 650V 75A TO247 onsemi	395	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	80 A	300 A	1.8V @ 15V, 75A	375 W	1.94mJ (on), 1.55mJ (off)	Standard	145 nC	33ns/176ns	400V, 75A, 10Ohm, 15V	36 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
RGWSX2TS65GC13 IGBT TRENCH FS 650V 104A TO247G Rohm Semiconductor	600	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	104 A	180 A	2V @ 15V, 60A	288 W	1.43mJ (on), 1.2mJ (off)	Standard	140 nC	55ns/180ns	400V, 60A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247G
FGH75T65SHDTL4 IGBT FIELD STOP 650V 150A TO247 onsemi	289	-	RFQ	برگه مشخصات	-	TO-247-4	Tube	Active	Field Stop	650 V	150 A	300 A	2.1V @ 15V, 75A	455 W	1.06mJ (on), 1.56mJ (off)	Standard	126 nC	55ns/189ns	400V, 75A, 15Ohm, 15V	76 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IXA12IF1200PB IGBT PT 1200V 20A TO220-3 IXYS	300	-	RFQ	برگه مشخصات	-	TO-220-3	Tube	Active	PT	1200 V	20 A	-	2.1V @ 15V, 10A	85 W	1.1mJ (on), 1.1mJ (off)	Standard	27 nC	-	600V, 10A, 100Ohm, 15V	350 ns	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
RGTH80TK65DGC11 IGBT TRNCH FIELD 650V 31A TO3PFM Rohm Semiconductor	450	-	RFQ	برگه مشخصات	-	TO-3PFM, SC-93-3	Tube	Active	Trench Field Stop	650 V	31 A	160 A	2.1V @ 15V, 40A	66 W	-	Standard	79 nC	34ns/120ns	400V, 40A, 10Ohm, 15V	58 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-3PFM
RGWS00TS65DGC13 IGBT TRNCH FIELD 650V 88A TO247G Rohm Semiconductor	600	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	88 A	150 A	2V @ 15V, 50A	245 W	980µJ (on), 910µJ (off)	Standard	108 nC	46ns/145ns	400V, 50A, 10Ohm, 15V	88 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247G
RGTV80TS65DGC11 IGBT TRNCH FIELD 650V 78A TO247N Rohm Semiconductor	450	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Not For New Designs	Trench Field Stop	650 V	78 A	160 A	1.9V @ 15V, 40A	234 W	1.02mJ (on), 710µJ (off)	Standard	81 nC	39ns/113ns	400V, 40A, 10Ohm, 15V	101 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247N
RGWX5TS65DHRC11 IGBT TRENCH FLD 650V 132A TO247N Rohm Semiconductor	332	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	132 A	300 A	1.9V @ 15V, 75A	348 W	-	Standard	213 nC	62ns/237ns	400V, 37.5A, 10Ohm, 15V	92 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247N
FGH50T65UPD IGBT TRENCH/FS 650V 100A TO247-3 onsemi	253	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Not For New Designs	Trench Field Stop	650 V	100 A	150 A	2.3V @ 15V, 50A	340 W	2.7mJ (on), 740µJ (off)	Standard	230 nC	32ns/160ns	400V, 50A, 6Ohm, 15V	53 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AIKB50N65DH5ATMA1 DISCRETE SWITCHES Infineon Technologies	3,980	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	NPT	650 V	50 A	-	-	-	-	Standard	-	-	-	-	-	-	-	Surface Mount	PG-TO263-3-2
RGT60TS65DGC13 IGBT TRNCH FIELD 650V 55A TO247G Rohm Semiconductor	554	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	55 A	90 A	2.1V @ 15V, 30A	194 W	-	Standard	58 nC	29ns/100ns	400V, 30A, 10Ohm, 15V	58 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247G
RGW80TK65DGVC11 IGBT TRNCH FIELD 650V 39A TO3PFM Rohm Semiconductor	440	-	RFQ	برگه مشخصات	-	TO-3PFM, SC-93-3	Tube	Active	Trench Field Stop	650 V	39 A	160 A	1.9V @ 15V, 40A	81 W	760µJ (on), 720µJ (off)	Standard	110 nC	44ns/143ns	400V, 40A, 10Ohm, 15V	92 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-3PFM
FGH75T65UPD IGBT TRENCH FS 650V 150A TO247-3 onsemi	1,131	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Not For New Designs	Trench Field Stop	650 V	150 A	225 A	2.3V @ 15V, 75A	375 W	2.85mJ (on), 1.2mJ (off)	Standard	385 nC	32ns/166ns	400V, 75A, 3Ohm, 15V	85 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
RGTH00TS65DGC13 IGBT TRNCH FIELD 650V 85A TO247G Rohm Semiconductor	581	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	85 A	200 A	2.1V @ 15V, 50A	277 W	-	Standard	94 nC	39ns/143ns	400V, 50A, 10Ohm, 15V	54 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247G
IXGH48N60A3D1 IGBT 600V 300W TO247AD IXYS	192	-	RFQ	برگه مشخصات	GenX3™	TO-247-3	Tube	Active	PT	600 V	-	300 A	1.35V @ 15V, 32A	300 W	950µJ (on), 2.9mJ (off)	Standard	110 nC	25ns/334ns	480V, 32A, 5Ohm, 15V	25 ns	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD
RGS80TSX2GC11 IGBT TRENCH FS 1200V 80A TO247N Rohm Semiconductor	249	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	1200 V	80 A	120 A	2.1V @ 15V, 40A	555 W	3mJ (on), 3.1mJ (off)	Standard	104 nC	49ns/199ns	600V, 40A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247N
RGW60TS65DHRC11 IGBT TRNCH FIELD 650V 64A TO247N Rohm Semiconductor	380	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	64 A	120 A	1.9V @ 15V, 30A	178 W	-	Standard	84 nC	36ns/107ns	400V, 15A, 10Ohm, 15V	87 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247N
IXBT6N170 IGBT 1700V 12A TO268AA IXYS	230	-	RFQ	برگه مشخصات	BIMOSFET™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	-	1700 V	12 A	36 A	3.4V @ 15V, 6A	75 W	-	Standard	17 nC	-	-	1.08 µs	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
RGWSX2TS65DGC13 IGBT TRENCH FS 650V 104A TO247G Rohm Semiconductor	600	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	104 A	180 A	2V @ 15V, 60A	288 W	1.43mJ (on), 1.2mJ (off)	Standard	140 nC	55ns/180ns	400V, 60A, 10Ohm, 15V	88 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247G
RGT80TS65DGC13 IGBT TRNCH FIELD 650V 70A TO247G Rohm Semiconductor	600	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Trench Field Stop	650 V	70 A	120 A	2.1V @ 15V, 40A	234 W	-	Standard	79 nC	34ns/119ns	400V, 40A, 10Ohm, 15V	236 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247G

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