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IGBT های منفرد

عکس شماره قطعه تولیدکننده موجودی قیمت تعداد برگه مشخصات سری بسته / کیس بسته بندی وضعیت محصول نوع IGBT ولتاژ - خرابی امیتر کلکتور (حداکثر) فعلی - گردآورنده (IC) (حداکثر) جریان - پالس جمع کننده (Icm) Vce(on) (Max) @ Vge، Ic قدرت - حداکثر انرژی سوئیچینگ نوع ورودی شارژ دروازه Td (روشن/خاموش) @ 25 درجه سانتی گراد شرایط تست زمان بازیابی معکوس (trr) دمای عملیاتی درجه صلاحیت نوع نصب بسته دستگاه تامین کننده
RGTV60TK65DGVC11

RGTV60TK65DGVC11

IGBT TRNCH FIELD 650V 33A TO3PFM

Rohm Semiconductor

9,285
RFQ
RGTV60TK65DGVC11

برگه مشخصات

- TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 33 A 120 A 1.9V @ 15V, 30A 76 W 570µJ (on), 500µJ (off) Standard 64 nC 33ns/105ns 400V, 30A, 10Ohm, 15V 95 ns -40°C ~ 175°C (TJ) - - Through Hole TO-3PFM
RGW00TS65DGC11

RGW00TS65DGC11

IGBT TRNCH FIELD 650V 96A TO247N

Rohm Semiconductor

2,940
RFQ
RGW00TS65DGC11

برگه مشخصات

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 96 A 200 A 1.9V @ 15V, 50A 254 W 1.18mJ (on), 960µJ (off) Standard 141 nC 52ns/180ns 400V, 50A, 10Ohm, 15V 95 ns -40°C ~ 175°C (TJ) - - Through Hole TO-247N
RGS80TS65HRC11

RGS80TS65HRC11

IGBT TRNCH FIELD 650V 73A TO247N

Rohm Semiconductor

8,846
RFQ
RGS80TS65HRC11

برگه مشخصات

- TO-247-3 Tube Active Trench Field Stop 650 V 73 A 120 A 2.1V @ 15V, 40A 272 W 1.05mJ (on), 1.03mJ (off) Standard 48 nC 37ns/112ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) - - Through Hole TO-247N
IXGH25N160

IXGH25N160

IGBT NPT 1600V 75A TO247AD

IXYS

9,409
RFQ
IXGH25N160

برگه مشخصات

- TO-247-3 Tube Active NPT 1600 V 75 A 200 A 4.7V @ 20V, 100A 300 W - Standard 84 nC - - - -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
AIKW75N60CTXKSA1

AIKW75N60CTXKSA1

IC DISCRETE 600V TO247-3

Infineon Technologies

2,509
RFQ
AIKW75N60CTXKSA1

برگه مشخصات

TrenchStop™ TO-247-3 Tube Active Trench Field Stop 600 V 80 A 225 A 2V @ 15V, 75A 428 W 2mJ (on), 2.5mJ (off) Standard 470 nC 33ns/330ns 400V, 75A, 5Ohm, 15V - -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3-41
APT68GA60B

APT68GA60B

IGBT PT 600V 121A TO247

Microchip Technology

1
RFQ
APT68GA60B

برگه مشخصات

POWER MOS 8™ TO-247-3 Tube Active PT 600 V 121 A 202 A 2.5V @ 15V, 40A 520 W 715µJ (on), 607µJ (off) Standard 298 nC 21ns/133ns 400V, 40A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
IGW75N60H3FKSA1

IGW75N60H3FKSA1

IGBT TRENCH FS 600V 140A TO247-3

Infineon Technologies

22
RFQ
IGW75N60H3FKSA1

برگه مشخصات

TrenchStop® TO-247-3 Tube Active Trench Field Stop 600 V 140 A 225 A 2.3V @ 15V, 75A 428 W 3mJ (on), 1.7mJ (off) Standard 470 nC 31ns/265ns 400V, 75A, 5.2Ohm, 15V - -40°C ~ 175°C (TJ) - - Through Hole PG-TO247-3
RGTV00TS65DGC11

RGTV00TS65DGC11

IGBT TRNCH FIELD 650V 95A TO247N

Rohm Semiconductor

6,320
RFQ
RGTV00TS65DGC11

برگه مشخصات

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 95 A 200 A 1.9V @ 15V, 50A 276 W 1.17mJ (on), 940µJ (off) Standard 104 nC 41ns/142ns 400V, 50A, 10Ohm, 15V 102 ns -40°C ~ 175°C (TJ) - - Through Hole TO-247N
RGS00TS65HRC11

RGS00TS65HRC11

IGBT TRNCH FIELD 650V 88A TO247N

Rohm Semiconductor

6,074
RFQ
RGS00TS65HRC11

برگه مشخصات

- TO-247-3 Tube Active Trench Field Stop 650 V 88 A 150 A 2.1V @ 15V, 50A 326 W 1.46mJ (on), 1.29mJ (off) Standard 58 nC 36ns/115ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) - - Through Hole TO-247N
IXYH90N65A5

IXYH90N65A5

IGBT PT 650V 220A TO247

IXYS

9,410
RFQ
IXYH90N65A5

برگه مشخصات

XPT™, GenX5™ TO-247-3 Tube Active PT 650 V 220 A 600 A 1.35V @ 15V, 60A 650 W 1.3mJ (on), 3.4mJ (off) Standard 260 nC 40ns/420ns 400V, 50A, 5Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-247 (IXTH)
IXYH30N170C

IXYH30N170C

1700V/108A HIGH VOLTAGE XPT IGB

IXYS

2,826
RFQ
IXYH30N170C

برگه مشخصات

XPT™ TO-247-3 Tube Active - 1700 V 108 A 255 A 3.7V @ 15V, 30A 937 W 5.9mJ (on), 3.3mJ (off) Standard 140 nC 28ns/150ns 850V, 30A, 10Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-247 (IXTH)
IXYH24N90C3D1

IXYH24N90C3D1

IGBT 900V 44A 200W C3 TO-247

IXYS

1
RFQ
IXYH24N90C3D1

برگه مشخصات

GenX3™, XPT™ TO-247-3 Tube Active - 900 V 44 A 105 A 2.7V @ 15V, 24A 200 W 1.35mJ (on), 400µJ (off) Standard 40 nC 20ns/73ns 450V, 24A, 10Ohm, 15V 340 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
APT35GN120SG

APT35GN120SG

IGBT NPT FS 1200V 94A D3PAK

Microchip Technology

23
RFQ
APT35GN120SG

برگه مشخصات

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active NPT, Trench Field Stop 1200 V 94 A 105 A 2.1V @ 15V, 35A 379 W -, 2.315mJ (off) Standard 220 nC 24ns/300ns 800V, 35A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
APT80GA60B

APT80GA60B

IGBT PT 600V 143A TO247

Microchip Technology

7,903
RFQ
APT80GA60B

برگه مشخصات

- TO-247-3 Tube Active PT 600 V 143 A 240 A 2.5V @ 15V, 47A 625 W 840µJ (on), 751µJ (off) Standard 230 nC 23ns/158ns 400V, 47A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
IXGH6N170

IXGH6N170

IGBT 1700V 12A 75W TO247

IXYS

5,038
RFQ
IXGH6N170

برگه مشخصات

- TO-247-3 Tube Active NPT 1700 V 12 A 24 A 4V @ 15V, 6A 75 W 1.5mJ (off) Standard 20 nC 40ns/250ns 1360V, 6A, 33Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
IXGH40N120B2D1

IXGH40N120B2D1

IGBT 1200V 75A 380W TO247

IXYS

7,481
RFQ
IXGH40N120B2D1

برگه مشخصات

- TO-247-3 Tube Active PT 1200 V 75 A 200 A 3.5V @ 15V, 40A 380 W 4.5mJ (on), 3mJ (off) Standard 138 nC 21ns/290ns 960V, 40A, 2Ohm, 15V 100 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
IXGH30N120B3D1

IXGH30N120B3D1

IGBT 1200V 300W TO247AD

IXYS

2
RFQ
IXGH30N120B3D1

برگه مشخصات

GenX3™ TO-247-3 Tube Active PT 1200 V - 150 A 3.5V @ 15V, 30A 300 W 3.47mJ (on), 2.16mJ (off) Standard 87 nC 16ns/127ns 960V, 30A, 5Ohm, 15V 100 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
APT50GN120B2G

APT50GN120B2G

IGBT NPT FIELD STOP 1200V 134A

Microchip Technology

4,291
RFQ
APT50GN120B2G

برگه مشخصات

- TO-247-3 Variant Tube Active NPT, Trench Field Stop 1200 V 134 A 150 A 2.1V @ 15V, 50A 543 W 4495µJ (off) Standard 315 nC 28ns/320ns 800V, 50A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
IXBT16N170A

IXBT16N170A

IGBT 1700V 16A TO268AA

IXYS

5,011
RFQ
IXBT16N170A

برگه مشخصات

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 1700 V 16 A 40 A 6V @ 15V, 10A 150 W 1.2mJ (off) Standard 65 nC 15ns/160ns 1360V, 10A, 10Ohm, 15V 360 ns -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
APT64GA90B2D30

APT64GA90B2D30

IGBT PT 900V 117A TO247

Microchip Technology

2
RFQ
APT64GA90B2D30

برگه مشخصات

POWER MOS 8™ TO-247-3 Variant Tube Active PT 900 V 117 A 193 A 3.1V @ 15V, 38A 500 W 1192µJ (on), 1088µJ (off) Standard 162 nC 18ns/131ns 600V, 38A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
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