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خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
DUR75120W DIODE GEN PURP 1.2KV 75A TO247AC Littelfuse Inc.	3,045	-	RFQ	برگه مشخصات	DUR	TO-247-2	Tube	Active	Standard	1200 V	75A	3.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	650 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
DHG60I1200HA DIODE GEN PURP 1.2KV 60A TO247AD IXYS	3,923	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	1200 V	60A	2.32 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	125 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 150°C
VS-70HF30 DIODE GEN PURP 300V 70A DO203AB Vishay General Semiconductor - Diodes Division	8,481	-	RFQ	برگه مشخصات	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	300 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
VS-70HFR30 DIODE GP REV 300V 70A DO203AB Vishay General Semiconductor - Diodes Division	4,635	-	RFQ	برگه مشخصات	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	300 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
VS-71HF10 DIODE GEN PURP 100V 70A DO203AB Vishay General Semiconductor - Diodes Division	3,733	-	RFQ	برگه مشخصات	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	15 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
JANTX1N5619/TR DIODE GEN PURP 600V 1A Microchip Technology	2,760	-	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	600 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 600 V	-	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
RURU10060 DIODE GEN PURP 600V 100A TO218 onsemi	8,602	-	RFQ	برگه مشخصات	-	TO-218-1	Tube	Obsolete	Standard	600 V	100A	1.6 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-218	-65°C ~ 175°C
VS-82PFR120 DIODE GP REV 1.2KV 80A DO203AB Vishay General Semiconductor - Diodes Division	8,733	-	RFQ	برگه مشخصات	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1200 V	80A	720 mV @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
SCS208AMC DIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor	7,856	-	RFQ	برگه مشخصات	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	291pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C (Max)
JAN1N4248/TR DIODE GEN PURP 800V 1A Microchip Technology	3,083	-	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 800 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
JANTX1N3614/TR DIODE GEN PURP 800V 1A Microchip Technology	5,847	-	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
CDLL1A60 DIODE SCHOTTKY 60V 1A DO213AB Microchip Technology	9,988	-	RFQ	برگه مشخصات	-	DO-213AB, MELF	Bulk	Active	Schottky	60 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	0.9pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AB	-
VS-95PF40T DIODE GEN PURP 400V 95A DO203AB Vishay General Semiconductor - Diodes Division	6,397	-	RFQ	برگه مشخصات	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	400 V	95A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
VS-95PFR40T DIODE GP REV 400V 95A DO203AB Vishay General Semiconductor - Diodes Division	8,024	-	RFQ	برگه مشخصات	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	95A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
JANTXV1N914UR DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	2,930	-	RFQ	برگه مشخصات	-	DO-213AA	Bulk	Discontinued	Standard	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	2.8pF @ 1.5V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	DO-213AA	-65°C ~ 175°C
JANTX1N5615/TR DIODE GEN PURP 200V 1A A-PAK Microchip Technology	4,577	-	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	200 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 200 V	45pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
GP3D010A120B DIODE SIL CARB 1.2KV 10A TO247-2 SemiQ	4,098	-	RFQ	برگه مشخصات	Amp+™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	608pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
1N4942E3/TR DIODE GEN PURP 200V 1A Microchip Technology	4,757	-	RFQ	-	-	Axial	Tape & Reel (TR)	Active	Standard	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	45pF @ 12V, 1MHz	-	-	Through Hole	-	-65°C ~ 175°C
JANTX1N3613 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	9,490	-	RFQ	برگه مشخصات	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N5620/TR DIODE GEN PURP 800V 1A Microchip Technology	7,183	-	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 800 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C