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عکس شماره قطعه تولیدکننده موجودی قیمت تعداد برگه مشخصات سری بسته / کیس بسته بندی وضعیت محصول تکنولوژی ولتاژ - معکوس DC (Vr) (حداکثر) فعلی - میانگین اصلاح شده (Io) ولتاژ - جلو (Vf) (حداکثر) @ اگر سرعت زمان بازیابی معکوس (trr) جریان - نشت معکوس @ Vr ظرفیت @ Vr، F درجه صلاحیت نوع نصب بسته دستگاه تامین کننده دمای عملیاتی - اتصال
UT262

UT262

DIODE GEN PURP 200V 2A A AXIAL

Microchip Technology

3,590
RFQ

-

- A, Axial Bulk Active Standard 200 V 2A 1 V @ 900 mA Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
UTR11

UTR11

DIODE GEN PURP 100V 1A A AXIAL

Microchip Technology

7,579
RFQ

-

- A, Axial Bulk Active Standard 100 V 1A 1.1 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 250 ns 3 µA @ 100 V 100pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR31

UTR31

DIODE GEN PURP 300V 1A A AXIAL

Microchip Technology

9,123
RFQ

-

- A, Axial Bulk Active Standard 300 V 1A 1.1 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 300 ns 3 µA @ 300 V 70pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR22

UTR22

DIODE GEN PURP 200V 2A A AXIAL

Microchip Technology

4,878
RFQ

-

- A, Axial Bulk Active Standard 200 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 3 µA @ 200 V 80pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR12

UTR12

DIODE GEN PURP 100V 2A A AXIAL

Microchip Technology

3,022
RFQ

-

- A, Axial Bulk Active Standard 100 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 3 µA @ 100 V 100pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR32

UTR32

DIODE GEN PURP 300V 2A A AXIAL

Microchip Technology

6,476
RFQ

-

- A, Axial Bulk Active Standard 300 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 3 µA @ 300 V 70pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UT261

UT261

DIODE GEN PURP 100V 2A A AXIAL

Microchip Technology

5,316
RFQ

-

- A, Axial Bulk Active Standard 100 V 2A 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 100 V - - - Through Hole A, Axial -65°C ~ 175°C
UTR51

UTR51

DIODE GEN PURP 500V 1A A AXIAL

Microchip Technology

5,151
RFQ

-

- A, Axial Bulk Active Standard 500 V 1A 1.1 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 400 ns 3 µA @ 500 V 50pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UT4005

UT4005

DIODE GEN PURP 50V 4A B

Microchip Technology

7,806
RFQ

-

- Axial Bulk Active Standard 50 V 4A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V - - - Through Hole B -195°C ~ 175°C
UT3010

UT3010

DIODE GEN PURP 100V 3A B

Microchip Technology

5,580
RFQ

-

- Axial Bulk Active Standard 100 V 3A 1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V - - - Through Hole B -195°C ~ 175°C
UT255

UT255

DIODE GEN PURP 500V 1A A AXIAL

Microchip Technology

2,480
RFQ

-

- A, Axial Bulk Active Standard 500 V 1A 1 V @ 750 mA Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 500 V - - - Through Hole A, Axial -65°C ~ 175°C
UTR10

UTR10

DIODE GP 100V 500MA A AXIAL

Microchip Technology

9,661
RFQ

-

- A, Axial Bulk Active Standard 100 V 500mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 250 ns 3 µA @ 100 V 100pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR61

UTR61

DIODE GEN PURP 600V 1A A AXIAL

Microchip Technology

6,866
RFQ

-

- A, Axial Bulk Active Standard 600 V 1A 1.1 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 400 ns 3 µA @ 600 V 40pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR419

UTR419

DIODE GEN PURP 400V 9A A AXIAL

Microchip Technology

3,347
RFQ

-

- A, Axial Bulk Active Standard 400 V 9A - Fast Recovery =< 500ns, > 200mA (Io) - - - - - Through Hole A, Axial -65°C ~ 175°C
UTR42

UTR42

DIODE GEN PURP 400V 2A A AXIAL

Microchip Technology

2,136
RFQ

-

- A, Axial Bulk Active Standard 400 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 3 µA @ 400 V 60pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR41

UTR41

DIODE GEN PURP 400V 1A A AXIAL

Microchip Technology

6,640
RFQ

-

- A, Axial Bulk Active Standard 400 V 1A 1.1 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 350 ns 3 µA @ 400 V 60pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR21

UTR21

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

8,793
RFQ

-

- A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 250 ns 3 µA @ 200 V 80pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR40

UTR40

DIODE GP 400V 500MA A AXIAL

Microchip Technology

6,047
RFQ

-

- A, Axial Bulk Active Standard 400 V 500mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 350 ns 3 µA @ 400 V 60pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UT267

UT267

DIODE GEN PURP 600V 2A A AXIAL

Microchip Technology

9,855
RFQ

-

- A, Axial Bulk Active Standard 600 V 2A 1 V @ 900 mA Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 600 V - - - Through Hole A, Axial -65°C ~ 175°C
UTR50

UTR50

DIODE GP 500V 500MA A AXIAL

Microchip Technology

5,137
RFQ

-

- A, Axial Bulk Active Standard 500 V 500mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 400 ns 3 µA @ 500 V 50pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C

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