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خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
1N5830 DIODE SCHOTTKY 25V 25A DO4 GeneSiC Semiconductor	2,442	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Schottky	25 V	25A	580 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-4	-55°C ~ 150°C
1N5831 DIODE SCHOTTKY 35V 25A DO4 GeneSiC Semiconductor	2,684	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Schottky	35 V	25A	580 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-4	-55°C ~ 150°C
1N6095 DIODE SCHOTTKY 30V 25A DO4 GeneSiC Semiconductor	4,098	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Schottky	30 V	25A	580 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-4	-55°C ~ 150°C
1N6096 DIODE SCHOTTKY 40V 25A DO4 GeneSiC Semiconductor	2,438	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Schottky	40 V	25A	580 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-4	-55°C ~ 150°C
JANTXV1N3595US DIODE GEN PURP 125V 4A B SQ-MELF Microchip Technology	5,897	-	RFQ	-	-	SQ-MELF, B	Bulk	Active	Standard	125 V	4A	1 V @ 200 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	-	-	Military	MIL-PRF-19500/241	Surface Mount	B, SQ-MELF	-65°C ~ 150°C
JANTX1N5420US/TR DIODE GEN PURP 600V 3A D-5B Microchip Technology	4,171	-	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	1 µA @ 600 V	-	Military	MIL-PRF-19500/411	Surface Mount	D-5B	-65°C ~ 175°C
1N6623US DIODE GEN PURP 880V 1A A-MELF Microchip Technology	9,166	-	RFQ	برگه مشخصات	-	SQ-MELF, A	Bulk	Active	Standard	880 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 880 V	10pF @ 10V, 1MHz	-	-	Surface Mount	A-MELF	-65°C ~ 150°C
1N6623U DIODE GP 800V 1.5A A SQ-MELF Microchip Technology	7,316	-	RFQ	-	-	SQ-MELF, A	Bulk	Active	Standard	800 V	1.5A	1.8 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 800 V	-	-	-	Surface Mount	A, SQ-MELF	-65°C ~ 175°C
1N6622E3/TR DIODE A AXIAL Microchip Technology	7,082	-	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	-	-	-	1.6 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	-	-	Through Hole	A, Axial	-
GATELEAD28134XPSA1 DUMMY 57 Infineon Technologies	3,463	-	RFQ	-	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IDC73D120T6MX1SA2 DIODE GP 1.2KV 150A WAFER Infineon Technologies	2,069	-	RFQ	برگه مشخصات	-	Die	Bulk	Discontinued	Standard	1200 V	150A	2.05 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	26 µA @ 1200 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 175°C
122NQ030R DIODE SCHOTTKY 30V 120A D-67 Vishay General Semiconductor - Diodes Division	5,957	-	RFQ	برگه مشخصات	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	30 V	120A	490 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 30 V	7400pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
FFSH5065A DIODE SIL CARB 650V 60A TO247-2 onsemi	5,579	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	60A	1.75 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	2530pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
120NQ045 DIODE SCHOTTKY 45V 120A D-67 Vishay General Semiconductor - Diodes Division	8,024	-	RFQ	برگه مشخصات	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	45 V	120A	570 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 45 V	5200pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
CDLL6858 DIODE SCHOTTKY 50V 75MA DO213AA Microchip Technology	5,382	-	RFQ	-	-	DO-213AA	Bulk	Active	Schottky	50 V	75mA	650 mV @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	4.5pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Surface Mount	DO-213AA	-65°C ~ 150°C
1N6858UR-1 SCHOTTKY RECTIFIER Microchip Technology	8,841	-	RFQ	برگه مشخصات	-	DO-213AA	Bulk	Active	Schottky	50 V	75mA	650 mV @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	4.5pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
CD6760 DIODE SCHOTTKY 80V 1A DIE Microchip Technology	2,059	-	RFQ	برگه مشخصات	-	Die	Tape & Reel (TR)	Active	Schottky	80 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 80 V	-	Military	MIL-PRF-19500/586	Surface Mount	Die	-55°C ~ 125°C
121NQ045 DIODE SCHOTTKY 45V 120A D-67 Vishay General Semiconductor - Diodes Division	5,771	-	RFQ	برگه مشخصات	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	45 V	120A	650 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 45 V	5200pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
1N6623US/TR DIODE GEN PURP 880V 1A A-MELF Microchip Technology	4,678	-	RFQ	برگه مشخصات	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	880 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 880 V	10pF @ 10V, 1MHz	-	-	Surface Mount	A-MELF	-65°C ~ 150°C
1N6623U/TR DIODE GP 800V 1.5A A SQ-MELF Microchip Technology	4,078	-	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	800 V	1.5A	1.8 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 800 V	-	-	-	Surface Mount	A, SQ-MELF	-65°C ~ 175°C