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خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
JANTX1N6079 DIODE GEN PURP 50V 2A G AXIAL Microchip Technology	3,716	-	RFQ	-	-	G, Axial	Bulk	Active	Standard	50 V	2A	1.5 V @ 37.7 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 50 V	-	Military	MIL-PRF-19500/503	Through Hole	G, Axial	-65°C ~ 155°C
JANS1N6640US/TR DIODE GEN PURP 50V 300MA D-5D Microchip Technology	3,908	-	RFQ	برگه مشخصات	-	SQ-MELF, D	Tape & Reel (TR)	Active	Standard	50 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/609	Surface Mount	D-5D	-65°C ~ 175°C
VS-SD400C04C DIODE GEN PURP 400V 800A DO200AA Vishay General Semiconductor - Diodes Division	6,391	-	RFQ	برگه مشخصات	-	DO-200AA, A-PUK	Bulk	Last Time Buy	Standard	400 V	800A	1.86 V @ 1930 A	Standard Recovery >500ns, > 200mA (Io)	-	15 mA @ 400 V	-	-	-	Clamp On	DO-200AA, A-PUK	-
JANTX1N6080/TR DIODE GP REV 100V 2A G AXIAL Microchip Technology	2,231	-	RFQ	-	-	G, Axial	Tape & Reel (TR)	Active	Standard, Reverse Polarity	100 V	2A	1.5 V @ 37.7 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 100 V	-	Military	MIL-PRF-19500/503	Through Hole	G, Axial	-65°C ~ 155°C
JANTXV1N6080 DIODE GEN PURP 100V 2A G AXIAL Microchip Technology	5,983	-	RFQ	-	-	G, Axial	Bulk	Active	Standard	100 V	2A	1.5 V @ 37.7 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 100 V	-	Military	MIL-PRF-19500/503	Through Hole	G, Axial	-65°C ~ 155°C
JANTXV1N6079 DIODE GEN PURP 50V 2A G AXIAL Microchip Technology	5,224	-	RFQ	-	-	G, Axial	Bulk	Active	Standard	50 V	2A	1.5 V @ 37.7 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 50 V	-	Military	MIL-PRF-19500/503	Through Hole	G, Axial	-65°C ~ 155°C
1N3663R DIODE GEN PURP REV 400V 35A DO21 Microchip Technology	6,169	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard, Reverse Polarity	400 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3663 DIODE GEN PURP 400V 35A DO21 Microchip Technology	5,176	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard	400 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3660R DIODE GEN PURP REV 100V 35A DO21 Microchip Technology	5,371	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard, Reverse Polarity	100 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3665R DIODE GEN PURP REV 600V 35A DO21 Microchip Technology	9,327	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard, Reverse Polarity	600 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3665 DIODE GEN PURP 600V 35A DO21 Microchip Technology	4,523	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard	600 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3662R DIODE GEN PURP REV 300V 35A DO21 Microchip Technology	8,635	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard, Reverse Polarity	300 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 300 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3659 DIODE GEN PURP 50V 35A DO21 Microchip Technology	3,607	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard	50 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3664R DIODE GEN PURP REV 500V 35A DO21 Microchip Technology	6,131	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard, Reverse Polarity	500 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3661 DIODE GEN PURP 200V 35A DO21 Microchip Technology	9,835	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard	200 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3662 DIODE GEN PURP 300V 35A DO21 Microchip Technology	4,780	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard	300 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 300 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3661R DIODE GEN PURP REV 200V 35A DO21 Microchip Technology	8,396	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard, Reverse Polarity	200 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3659R DIODE GEN PURP REV 50V 35A DO21 Microchip Technology	9,643	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard, Reverse Polarity	50 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3664 DIODE GEN PURP 500V 35A DO21 Microchip Technology	5,025	-	RFQ	برگه مشخصات	-	DO-208AA	Bulk	Active	Standard	500 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	-	-	Press Fit	DO-21	-65°C ~ 175°C
1N3666 DIODE GEN PURP 80V 500MA AXIAL Microchip Technology	2,199	-	RFQ	-	-	Axial	Bulk	Active	Standard	80 V	500mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	25 µA @ 50 V	-	-	-	Through Hole	Axial	-65°C ~ 85°C