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خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
1N5401GHA0G DIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation	2,389	-	RFQ	-	-	DO-201AD, Axial	Tape & Box (TB)	Discontinued	Standard	100 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 100 V	25pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-201AD	-55°C ~ 150°C
1N5402G A0G DIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation	9,320	-	RFQ	برگه مشخصات	-	DO-201AD, Axial	Tape & Box (TB)	Active	Standard	200 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	25pF @ 4V, 1MHz	-	-	Through Hole	DO-201AD	-55°C ~ 150°C
1N5402GHA0G DIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation	5,431	-	RFQ	برگه مشخصات	-	DO-201AD, Axial	Tape & Box (TB)	Active	Standard	200 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	25pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-201AD	-55°C ~ 150°C
1N5406GHA0G DIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation	5,199	-	RFQ	-	-	DO-201AD, Axial	Tape & Box (TB)	Active	Standard	600 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	25pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-201AD	-55°C ~ 150°C
1N5407GHA0G DIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation	7,699	-	RFQ	-	-	DO-201AD, Axial	Tape & Box (TB)	Discontinued	Standard	800 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	25pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-201AD	-55°C ~ 150°C
1N5822 A0G DIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation	4,902	-	RFQ	برگه مشخصات	-	DO-201AD, Axial	Tape & Box (TB)	Active	Schottky	40 V	3A	525 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	200pF @ 4V, 1MHz	-	-	Through Hole	DO-201AD	-55°C ~ 125°C
1T4G A0G DIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation	7,410	-	RFQ	برگه مشخصات	-	T-18, Axial	Tape & Box (TB)	Active	Standard	400 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	10pF @ 4V, 1MHz	-	-	Through Hole	TS-1	-55°C ~ 150°C
1T5G A0G DIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation	4,347	-	RFQ	برگه مشخصات	-	T-18, Axial	Tape & Box (TB)	Active	Standard	600 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	10pF @ 4V, 1MHz	-	-	Through Hole	TS-1	-55°C ~ 150°C
1T7G A0G DIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation	5,506	-	RFQ	برگه مشخصات	-	T-18, Axial	Tape & Box (TB)	Active	Standard	1000 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	10pF @ 4V, 1MHz	-	-	Through Hole	TS-1	-55°C ~ 150°C
2A02G A0G DIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation	4,489	-	RFQ	برگه مشخصات	-	DO-204AC, DO-15, Axial	Tape & Box (TB)	Active	Standard	100 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 100 V	15pF @ 4V, 1MHz	-	-	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C
2A07GHA0G DIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation	3,929	-	RFQ	-	-	DO-204AC, DO-15, Axial	Tape & Box (TB)	Active	Standard	1000 V	2A	1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	15pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C
3A100HA0G DIODE GEN PURP 3A DO204AC Taiwan Semiconductor Corporation	4,176	-	RFQ	-	-	DO-204AC, DO-15, Axial	Tape & Box (TB)	Active	Standard	1000 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	27pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C
3A60HA0G DIODE GEN PURP 600V 3A DO204AC Taiwan Semiconductor Corporation	7,092	-	RFQ	-	-	DO-204AC, DO-15, Axial	Tape & Box (TB)	Active	Standard	600 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	27pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C
6A100G A0G DIODE GEN PURP 1KV 6A R-6 Taiwan Semiconductor Corporation	4,936	-	RFQ	برگه مشخصات	-	R-6, Axial	Tape & Box (TB)	Active	Standard	1000 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A10G A0G DIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation	9,402	-	RFQ	برگه مشخصات	-	R-6, Axial	Tape & Box (TB)	Active	Standard	100 V	6A	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A10GHA0G DIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation	6,202	-	RFQ	برگه مشخصات	-	R-6, Axial	Tape & Box (TB)	Active	Standard	100 V	6A	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
6A40G A0G DIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation	8,804	-	RFQ	برگه مشخصات	-	R-6, Axial	Tape & Box (TB)	Active	Standard	400 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A40GHA0G DIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation	7,417	-	RFQ	برگه مشخصات	-	R-6, Axial	Tape & Box (TB)	Active	Standard	400 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
6A60G A0G DIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation	8,673	-	RFQ	برگه مشخصات	-	R-6, Axial	Tape & Box (TB)	Active	Standard	600 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A80G A0G DIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation	3,113	-	RFQ	برگه مشخصات	-	R-6, Axial	Tape & Box (TB)	Active	Standard	800 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C