جستجوی داغ 900-5G172-2520-000 900-5G172-2750-002 900-5G172-2250-000 L6920DTR 100B390GT500XT1K 945-13766-0000-000 PCF85063AT/AY PCF85063BTL/1,118 DS3231MZ/V+ PCF8563T/F4,112

در دسترس ۲۴/۷ در

+86 13632816717

خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
RURG3060-F085 DIODE GEN PURP 600V 30A TO247-2 onsemi	194	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Avalanche	600 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	250 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
STPSC10065DY DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	1,016	-	RFQ	برگه مشخصات	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC10H065G-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	516	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STPSC10065G2-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,206	-	RFQ	برگه مشخصات	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
DMA30E1800HA DIODE GEN PURP 1.8KV 30A TO247 IXYS	300	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	1800 V	30A	1.25 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1800 V	10pF @ 400V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
MSC010SDA120K DIODE SIL CARB 1.2KV 10A TO220 Microchip Technology	178	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-220-2	-
DSI45-12A DIODE GEN PURP 1.2KV 45A TO247AD IXYS	635	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	1200 V	45A	1.28 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	20 µA @ 1200 V	18pF @ 400V, 1MHz	-	-	Through Hole	TO-247AD	-40°C ~ 175°C
C6D08065E DIODE SIL CARB 650V 29A TO252-2 Wolfspeed, Inc.	767	-	RFQ	برگه مشخصات	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	29A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
C6D08065G DIODE SIL CARB 650V 30A TO263-2 Wolfspeed, Inc.	653	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.4 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
IDH08G120C5XKSA1 DIODE SIL CARB 1.2KV TO220-1 Infineon Technologies	285	-	RFQ	برگه مشخصات	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	22.8A	1.95 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	365pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
SIC0860P-BP DIODE SIL CARB 650V 8A TO220AC Micro Commercial Co	4,804	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	30pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STPSC10H065G2-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,278	-	RFQ	برگه مشخصات	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
CD5819 DIODE SCHOTTKY 40V 1A DIE Microchip Technology	392	-	RFQ	برگه مشخصات	-	Die	Bulk	Active	Schottky	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Military	MIL-PRF-19500/586	Surface Mount	Die	-55°C ~ 125°C
VS-60APH03-N3 DIODE GEN PURP 300V 60A TO247AC Vishay General Semiconductor - Diodes Division	220	-	RFQ	برگه مشخصات	FRED Pt®	TO-247-3	Tube	Active	Standard	300 V	60A	1.45 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	42 ns	10 µA @ 300 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
VS-75EPU12L-N3 DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division	813	-	RFQ	برگه مشخصات	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	75A	2.55 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	265 ns	420 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
DNA30EM2200PZ-TUB DIODE GEN PURP 2.2KV 30A TO263HV IXYS	441	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Surface Mount	TO-263HV	-55°C ~ 175°C
STTH60RQ06W DIODE GEN PURP 600V 60A DO247 STMicroelectronics	313	-	RFQ	برگه مشخصات	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	60A	-	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	80 µA @ 600 V	-	-	-	Through Hole	DO-247	175°C (Max)
SCS206AJTLL DIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor	2,842	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)
SCS306AJTLL DIODE SIL CARBIDE 650V 6A LPTL Rohm Semiconductor	2,023	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
GD10MPS12H DIODE SIL CARB 1.2KV 10A TO247-2 GeneSiC Semiconductor	540	-	RFQ	برگه مشخصات	SiC Schottky MPS™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-247-2	175°C