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خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
VS-E5TX3012S2L-M3 DIODE GEN PURP 1.2KV 30A TO263AB Vishay General Semiconductor - Diodes Division	1,540	-	RFQ	برگه مشخصات	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	30A	3.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 1200 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
S3D08065A DIODE SIL CARB 650V 23A TO220AC SMC Diode Solutions	1,438	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	23A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	51 µA @ 650 V	661pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
FFSP1065B DIODE SIL CARB 650V 11A TO220-2 onsemi	628	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-EPU6006-N3 DIODE GP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	475	-	RFQ	برگه مشخصات	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	1.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	110 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-65°C ~ 175°C
IDL06G65C5XUMA2 DIODE SIL CARBIDE 650V 6A VSON-4 Infineon Technologies	2,908	-	RFQ	برگه مشخصات	CoolSiC™+	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Surface Mount	PG-VSON-4	-55°C ~ 150°C
FFSP0665A DIODE SIL CARB 650V 8.8A TO220L onsemi	688	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8.8A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	361pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
DSI30-12AS-TUB DIODE GEN PURP 1.2KV 30A TO263AA IXYS	1,195	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	1200 V	30A	1.29 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1200 V	10pF @ 400V, 1MHz	-	-	Surface Mount	TO-263AA	-40°C ~ 175°C
FFSD0865B DIODE SIL CARB 650V 11.6A DPAK onsemi	148	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11.6A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SCS302AJTLL DIODE SIL CARB 650V 2.15A LPTL Rohm Semiconductor	499	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	2.15A	1.5 V @ 2.15 A	No Recovery Time > 500mA (Io)	0 ns	10.8 µA @ 650 V	110pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
VS-10ETF10FP-M3 DIODE GP 1KV 10A TO220-2FP Vishay General Semiconductor - Diodes Division	442	-	RFQ	برگه مشخصات	-	TO-220-2 Full Pack	Tube	Active	Standard	1000 V	10A	1.33 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	310 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-220-2 Full Pack	-40°C ~ 150°C
VS-E5TH2112S2LHM3 20A, 1200V, "H" SERIES GEN 5 FRE Vishay General Semiconductor - Diodes Division	850	-	RFQ	برگه مشخصات	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	20A	2.66 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	125 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
VS-E5PH3006LHN3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	878	-	RFQ	برگه مشخصات	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	30A	1.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	46 ns	20 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E5PX3006LHN3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	490	-	RFQ	برگه مشخصات	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	41 ns	20 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
APT40DQ120SG DIODE GEN PURP 1.2KV 40A D3PAK Microchip Technology	958	-	RFQ	برگه مشخصات	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	1200 V	40A	3.4 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	100 µA @ 1200 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
VS-E5TH1512S2LHM3 DIODE GEN PURP 1.2KV 15A TO263AB Vishay General Semiconductor - Diodes Division	815	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	15A	2.5 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
VS-E5PH6006L-N3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	705	-	RFQ	برگه مشخصات	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	54 ns	25 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
S4D04120E DIODE SIL CARBIDE 1.2KV 4A DPAK SMC Diode Solutions	1,787	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	4A	1.8 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	302pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
VS-E5PW6006LHN3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	1,535	-	RFQ	برگه مشخصات	FRED Pt® Gen 5	TO-247-2	Tube	Active	Standard	600 V	60A	2.6 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	42 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
RFN20TJ6SFHGC9 DIODE GP 600V 20A TO220ACFP Rohm Semiconductor	978	-	RFQ	برگه مشخصات	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	20A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
UJ3D06516TS DIODE SIL CARB 650V 16A TO220-2 Qorvo	938	-	RFQ	برگه مشخصات	Gen-III	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C