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عکس شماره قطعه تولیدکننده موجودی قیمت تعداد برگه مشخصات سری بسته / کیس بسته بندی وضعیت محصول تکنولوژی ولتاژ - معکوس DC (Vr) (حداکثر) فعلی - میانگین اصلاح شده (Io) ولتاژ - جلو (Vf) (حداکثر) @ اگر سرعت زمان بازیابی معکوس (trr) جریان - نشت معکوس @ Vr ظرفیت @ Vr، F درجه صلاحیت نوع نصب بسته دستگاه تامین کننده دمای عملیاتی - اتصال
RB058LB100TBR1

RB058LB100TBR1

SUPER LOW IR, 100V 3A, SMBP, SCH

Rohm Semiconductor

2,999
RFQ
RB058LB100TBR1

برگه مشخصات

- DO-214AA, SMB Tape & Reel (TR) Active Schottky 100 V 3A 840 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 µA @ 100 V - - - Surface Mount SMBP 175°C
SFAF806G

SFAF806G

DIODE GEN PURP 400V 8A ITO220AC

Taiwan Semiconductor Corporation

1,000
RFQ
SFAF806G

برگه مشخصات

- TO-220-2 Full Pack Tube Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 60pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
GPA806

GPA806

DIODE GEN PURP 800V 8A TO220AC

Taiwan Semiconductor Corporation

1,000
RFQ
GPA806

برگه مشخصات

- TO-220-2 Tube Active Standard 800 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
GPA806H

GPA806H

8A, 800V, STANDARD RECOVERY RECT

Taiwan Semiconductor Corporation

1,000
RFQ
GPA806H

برگه مشخصات

- TO-220-2 Tube Active Standard 800 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
SFAF806GH

SFAF806GH

35NS, 8A, 400V, SUPER FAST RECOV

Taiwan Semiconductor Corporation

1,000
RFQ
SFAF806GH

برگه مشخصات

- TO-220-2 Full Pack Tube Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
GPA805H

GPA805H

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

998
RFQ
GPA805H

برگه مشخصات

- TO-220-2 Tube Active Standard 600 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA807

GPA807

DIODE GEN PURP 1KV 8A TO220AC

Taiwan Semiconductor Corporation

984
RFQ
GPA807

برگه مشخصات

- TO-220-2 Tube Active Standard 1000 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
PNU650200EJ-QJ

PNU650200EJ-QJ

650V, 20A ULTRAFAST RECOVERY REC

Nexperia USA Inc.

761
RFQ
PNU650200EJ-QJ

برگه مشخصات

- TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 650 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 5 µA @ 650 V 13pF @ 400V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK R2P 175°C
NRVTS15100PFST3G

NRVTS15100PFST3G

DIODE SCHOTTKY 100V 15A TO277-3

onsemi

2,955
RFQ
NRVTS15100PFST3G

برگه مشخصات

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 15A 810 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 100 V 1150pf @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-277-3 -55°C ~ 175°C
V20PL63HM3/H

V20PL63HM3/H

20A, 60V, SMPC TRENCH SKY RECT.

Vishay General Semiconductor - Diodes Division

2,590
RFQ
V20PL63HM3/H

برگه مشخصات

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 20A 640 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 60 V 3400pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 150°C
MUR8L60

MUR8L60

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

1,000
RFQ
MUR8L60

برگه مشخصات

- TO-220-2 Tube Active Standard 600 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 5 µA @ 600 V - - - Through Hole TO-220AC -55°C ~ 175°C
SDUR15U120

SDUR15U120

ULTRAFAST RECTIFIER 1200V 15A TO

SMC Diode Solutions

6,670
RFQ
SDUR15U120

برگه مشخصات

- TO-220-2 Tube Active Standard 1200 V 15A 3.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 100 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
HERAF1008G

HERAF1008G

DIODE GEN PURP 1KV 10A ITO220AC

Taiwan Semiconductor Corporation

1,000
RFQ
HERAF1008G

برگه مشخصات

- TO-220-2 Full Pack Tube Active Standard 1000 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1004G

HERAF1004G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000
RFQ
HERAF1004G

برگه مشخصات

- TO-220-2 Full Pack Tube Active Standard 300 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1007GH

HERAF1007GH

80NS, 10A, 800V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000
RFQ
HERAF1007GH

برگه مشخصات

- TO-220-2 Full Pack Tube Active Standard 800 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF1008GH

HERAF1008GH

80NS, 10A, 1000V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000
RFQ
HERAF1008GH

برگه مشخصات

- TO-220-2 Full Pack Tube Active Standard 1000 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SF2006G

SF2006G

DIODE GEN PURP 400V 20A TO220AB

Taiwan Semiconductor Corporation

995
RFQ
SF2006G

برگه مشخصات

- TO-220-3 Tube Active Standard 400 V 20A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 400 V 80pF @ 4V, 1MHz - - Through Hole TO-220AB -55°C ~ 150°C
V20PWM63HM3/I

V20PWM63HM3/I

DIODE SCHOTTKY 60V 20A SLIMDPAK

Vishay General Semiconductor - Diodes Division

8,952
RFQ
V20PWM63HM3/I

برگه مشخصات

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 60 V 20A 670 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 35 µA @ 60 V 3000pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SlimDPAK -40°C ~ 175°C
SFAF1004G

SFAF1004G

DIODE GEN PURP 200V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000
RFQ
SFAF1004G

برگه مشخصات

- TO-220-2 Full Pack Tube Active Standard 200 V 10A 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 170pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
UG5J

UG5J

DIODE GEN PURP 600V 5A TO220AC

Taiwan Semiconductor Corporation

1,000
RFQ
UG5J

برگه مشخصات

- TO-220-2 Tube Active Standard 600 V 5A 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 30 µA @ 600 V - - - Through Hole TO-220AC -55°C ~ 150°C
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