جستجوی داغ 900-53651-0000-000 900-5G172-2240-000 900-5G172-2540-000 900-5G178-2250-000 900-52061-0000-000 940-54242-0006-000 900-13448-0020-000 EAPLP05RDQA0 EAC28FSLN EAG.2B.312.CLN

در دسترس ۲۴/۷ در

+86 13632816717

خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
SDS065J050H3-ISATH DIODE 650V-50A TO247-2L Luminus Devices Inc.	148	-	RFQ	برگه مشخصات	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	114A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	2970pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
VS-80APF06-M3 DIODE GEN PURP 600V 80A TO247AC Vishay General Semiconductor - Diodes Division	289	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Standard	600 V	80A	1.25 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	190 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
VS-85HF40M8 DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division	152	-	RFQ	برگه مشخصات	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	400 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
STPSC30G12WL 1200 V, 20 A HIGH SURGE SILICON STMicroelectronics	166	-	RFQ	برگه مشخصات	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
1N5822 SCHOTTKY DO201 40V 3A 150C Microchip Technology	131	-	RFQ	برگه مشخصات	-	B, Axial	Bulk	Active	Schottky	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	-	-	Through Hole	B, Axial	-65°C ~ 125°C
GP12022-BP STANDARD RECTIFIER 2200V 120A TO Micro Commercial Co	1,777	-	RFQ	برگه مشخصات	-	TO-264-2	Tape & Reel (TR)	Active	Standard	2200 V	120A	1.31 V @ 120 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 2200 V	-	-	-	Through Hole	TO-264P	-55°C ~ 150°C
STPSC40G12WL 1200 V, 20 A HIGH SURGE SILICON STMicroelectronics	200	-	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
E6D40065G DIODE SIC 650V 131A TO263 Wolfspeed, Inc.	1,042	-	RFQ	برگه مشخصات	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	131A	1.5 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	2485pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
SDS170J025H5-ISATH DIODE 1700V-25A TO247-2L Luminus Devices Inc.	150	-	RFQ	-	-	TO-247-2	Tube	Active	-	1700 V	25A	-	-	-	-	-	-	-	Through Hole	TO-247-2L	-
SDS120J040H3-ISATH DIODE 1200V-40A TO247-2L Luminus Devices Inc.	135	-	RFQ	برگه مشخصات	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	98A	1.6 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	96 µA @ 1200 V	2648pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
STPSC30G12WLY AUTOMOTIVE 1200 V, 30 A SILICON STMicroelectronics	115	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	225 µA @ 1200 V	2272pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-247 LL	-55°C ~ 175°C
SDS120J050H3-ISATH DIODE 1200V-50A TO247-2L Luminus Devices Inc.	145	-	RFQ	برگه مشخصات	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	145A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	4547pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
STPSC40G12WLY AUTOMOTIVE 1200 V, 40A POWER SCH STMicroelectronics	200	-	RFQ	برگه مشخصات	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IDWD25G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	برگه مشخصات	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	77A	1.75 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	375 µA @ 2 kV	2850pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C
NDSH50120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	439	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	53A	1.75 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	3691pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
IDWD40G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	برگه مشخصات	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	114A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 2 kV	4550pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C
IDWD50G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	برگه مشخصات	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	140A	1.75 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	750 µA @ 2 kV	5700pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C
IDYH80G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	-	CoolSiC™	TO-247-4 Variant	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	157A	1.75 V @ 80 A	-	-	1.2 A @ 2000 V	9100pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-U04	-55°C ~ 175°C
IDWD80G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	برگه مشخصات	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	214A	1.75 V @ 80 A	No Recovery Time > 500mA (Io)	0 ns	1.2 mA @ 2 kV	9100pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C
JANTX1N3891 DIODE GEN PURP 200V 12A DO203AA Microchip Technology	96	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	12A	1.5 V @ 38 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	10 µA @ 200 V	-	Military	MIL-PRF-19500/304	Stud Mount	DO-203AA	-65°C ~ 175°C