دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
SDT08S60 DIODE SIL CARB 600V 8A TO220-2-2 Infineon Technologies	6,617	-	RFQ	برگه مشخصات	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	280pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
PCDP1065G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,478	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	364pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDB1065G1_R2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	4,000	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	364pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
IV1D06006P3 DIODE SIC 650V 16.7A TO252-3 Inventchip	2,481	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	SiC (Silicon Carbide) Schottky	650 V	16.7A	1.65 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 650 V	224pF @ 1V, 1MHz	-	-	Surface Mount	TO-252-3	-55°C ~ 175°C
FFSPF1065A DIODE SIC 650V 10A TO220F-2FS onsemi	930	-	RFQ	برگه مشخصات	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
PCDD1065G1_L2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,797	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	364pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
STPSC1006D DIODE SIL CARB 600V 10A TO220AC STMicroelectronics	166	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	650pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
WNSC6D16650B6J DIODE SIL CARBIDE 650V 16A D2PAK WeEn Semiconductors	2,665	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C
C6D10065A DIODE SIL CARB 650V 37A TO220-2 Wolfspeed, Inc.	442	-	RFQ	برگه مشخصات	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	37A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	611pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC12H065DY DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	219	-	RFQ	برگه مشخصات	ECOPACK®2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 650 V	600pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
FFH75H60S DIODE GEN PURP 600V 75A TO247-2 onsemi	1,196	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Obsolete	Standard	600 V	75A	2.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
CDBJSC10650-G DIODE SIL CARB 650V 10A TO220F Comchip Technology	472	-	RFQ	برگه مشخصات	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	710pF @ 0V, 1MHz	-	-	Through Hole	TO-220F	-55°C ~ 175°C
UJ3D1210KSD DIODE SIL CARB 1.2KV 5A TO247-3 Qorvo	528	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
SSTPAD100 SOT-23 3L ROHS DIODE GEN PURP 30V 10MA SOT23-3 Linear Integrated Systems, Inc.	6,215	-	RFQ	برگه مشخصات	PAD	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	Standard	30 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	100 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Surface Mount	SOT-23-3	-55°C ~ 150°C
RURU50100 DIODE AVALANCHE 1KV 50A TO218 Harris Corporation	2,668	-	RFQ	برگه مشخصات	-	TO-218-1	Bulk	Active	Avalanche	1000 V	50A	1.9 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 1000 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
JPAD100 TO-92 2L ROHS DIODE GEN PURP 35V 10MA TO92 Linear Integrated Systems, Inc.	940	-	RFQ	برگه مشخصات	PAD	TO-226-2, TO-92-2 (TO-226AC)	Bulk	Active	Standard	35 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	100 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-92	-55°C ~ 150°C
PAD100 DFN 8L ROHS DIODE GEN PURP 30V 10MA 8DFN Linear Integrated Systems, Inc.	2,990	-	RFQ	برگه مشخصات	PAD-DFN	8-VFDFN Exposed Pad	Cut Tape (CT)	Active	Standard	30 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	100 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Surface Mount	8-DFN (2x2)	-55°C ~ 150°C
PCFFS4065AF DIODE SIL CARBIDE 650V 40A DIE onsemi	1,364	-	RFQ	-	-	Die	Tray	Obsolete	SiC (Silicon Carbide) Schottky	650 V	40A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1989pf @ 1V, 100kHz	-	-	Surface Mount	Die	-55°C ~ 175°C
PAD50DFN 8L ROHS DIODE GEN PURP 30V 10MA 8DFN Linear Integrated Systems, Inc.	3,000	-	RFQ	برگه مشخصات	PAD-DFN	8-VFDFN Exposed Pad	Tape & Reel (TR)	Active	Standard	30 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	50 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Surface Mount	8-DFN (2x2)	-55°C ~ 150°C
LSIC2SD065C08A DIODE SIL CARB 650V 23A TO252 Littelfuse Inc.	2,288	-	RFQ	برگه مشخصات	Gen2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	23A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	415pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C