دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
JANTX1N6640 DIODE GEN PURP 50V 300MA MACOM Technology Solutions	114	-	RFQ	برگه مشخصات	-	SQ-MELF, D	Bulk	Discontinued	Standard	50 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	90 µA @ 50 V	-	Military	MIL-PRF-19500/578 & /609	Surface Mount	D-5D	-65°C ~ 175°C
R714XA RECTIFIER,TO-3,30A,400V,200NS,CA Varo	279	-	RFQ	-	-	-	Box	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-175BGQ030HF4 DIODE SCHOTTKY 30V 175A POWERTAB Vishay General Semiconductor - Diodes Division	192	-	RFQ	-	-	PowerTab®	Tube	Obsolete	Schottky	30 V	175A	590 mV @ 175 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 30 V	8500pF @ 5V, 1MHz	Automotive	AEC-Q101	Chassis Mount	PowerTab®	-55°C ~ 150°C
FFSH10120A-F155 DIODE SIL CARB 1.2KV 17A TO247-2 onsemi	180	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	17A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
SCS315AHGC9 DIODE SIL CARB 650V 15A TO220ACP Rohm Semiconductor	376	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	15A	-	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	750pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
FFSH2065ADN-F155 DIODE SIL CARB 650V 13A TO247-3 onsemi	632	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	13A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
NDSH20120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	415	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	26A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1480pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
WNSC2D201200WQ DIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors	2,391	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	845pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
LSIC2SD065A16A DIODE SIL CARB 650V 38A TO220-2L Littelfuse Inc.	842	-	RFQ	برگه مشخصات	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	38A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	730pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
C6D20065G-TR SIC, SCHOTTKY DIODE,64A, 650V, T Wolfspeed, Inc.	800	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	64A	1.27 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
SCS210KGC DIODE SIL CARB 1.2KV 10A TO220AC Rohm Semiconductor	156	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
AIDW30S65C5XKSA1 DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies	24	-	RFQ	برگه مشخصات	CoolSiC™	TO-247-3	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	860pF @ 1V, 1MHz	Automotive	AEC-Q100/101	Through Hole	PG-TO247-3-41	-40°C ~ 175°C
STPSC15H12DY DIODE SIL CARB 1.2KV 15A TO220AC STMicroelectronics	990	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
IV1D12010O2 DIODE SIL CARB 1.2KV 28A TO220-2 Inventchip	190	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	28A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	575pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
IV1D12010T2 DIODE SIL CARB 1.2KV 30A TO247-2 Inventchip	107	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	575pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
SICB20120Y-TP DIODE GEN PURP 1.2KV 20A D2PAK Micro Commercial Co	1,540	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 1200 V	1552pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
IDW15S120FKSA1 DIODE SIL CARB 1.2KV 15A TO247-3 Infineon Technologies	9,240	-	RFQ	برگه مشخصات	CoolSiC™+	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	15A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	305 µA @ 1200 V	870pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
SCS320AHGC9 DIODE SIL CARB 650V 20A TO220ACP Rohm Semiconductor	2,710	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	-	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1000pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
1N4305 DIODE GEN PURP 75V 300MA DO35 Fairchild Semiconductor	112,938	-	RFQ	برگه مشخصات	-	DO-204AH, DO-35, Axial	Bulk	Obsolete	Standard	75 V	300mA	850 mV @ 10 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	175°C (Max)
PCDP15120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2,000	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 1200 V	815pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C