دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
FT2000KA DIODE GEN PURP 50V 20A TO220AC Diotec Semiconductor	98,840	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	Standard	50 V	20A	960 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 50 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 150°C
SBX2550 DIODE SCHOTTKY 50V 25A P600 Diotec Semiconductor	500	-	RFQ	برگه مشخصات	-	P600, Axial	Tape & Reel (TR)	Active	Schottky	50 V	25A	570 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	-	-	Through Hole	P600	-50°C ~ 150°C
KT20A150 DIODE GEN PURP 150V 20A TO220AC Diotec Semiconductor	1,050	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	Standard	150 V	20A	980 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 150 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
KT20K150 DIODE GEN PURP 150V 20A TO220AC Diotec Semiconductor	433	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	Standard	150 V	20A	980 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 150 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
ADC6D10065G DIODE SIL SIC 650V 36A TO263-2 Analog Power Inc.	1,000	-	RFQ	برگه مشخصات	WBG	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	36A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	-	2 µA @ 650 V	6.3pF @ 0V, 100kHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
IDH16S60CAKSA1 DIODE SIL CARB 600V 16A TO220-2 Infineon Technologies	12,385	-	RFQ	برگه مشخصات	CoolSiC™+	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	600 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	650pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
QSD50HCS120U 1200v 50amp SiC Schottky Barrier Quest Semi	1,000	-	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	149A	1.7 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	2380000pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220-2L	-55°C ~ 175°C
NC1D120C20KTNG SiC Schottky 1200V 20A TO247- 2L NovuSem	500	-	RFQ	برگه مشخصات	NC1D	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	1371pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
P2500Y DIODE AVALANCHE 2KV 25A P600 Diotec Semiconductor	8,000	-	RFQ	برگه مشخصات	-	P600, Axial	Tape & Reel (TR)	Active	Avalanche	2000 V	25A	1.1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 2 V	-	-	-	Through Hole	P600	-50°C ~ 175°C
ADC3D10065I DIODE SIL SIC 1200V 10A TO220 Analog Power Inc.	550	-	RFQ	برگه مشخصات	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	2 µA @ 650 V	6.3pF @ 200V, 100kHz	-	-	Through Hole	TO-220F	-40°C ~ 175°C
QSD10HCS120U Schottky barrier diode 1200v 10a Quest Semi	1,600	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	37A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 1200 V	770pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
NC1D120C30KTNG SiC Schottky 1200V 30A TO247- 2L NovuSem	300	-	RFQ	برگه مشخصات	NC1D	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	85 µA @ 1200 V	2125pF @ 0.1V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
FFSH20120A SILICON CARBIDE SCHOTTKY DIODE onsemi	900	-	RFQ	برگه مشخصات	-	TO-247-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100KHz	-	-	Through Hole	TO-247-2	-
QSD25HCS170U 1700v 25amp SiC Schottky Barrier Quest Semi	1,233	-	RFQ	-	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	94A	1.9 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1700 V	2822pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
NC1D120C40GTDN SiC Diode 1200V 40A Dual Die TO2 NextGen Components	300	-	RFQ	برگه مشخصات	NC1D	TO-247-3L	Tube	Active	SiC (Silicon Carbide) Schottky	1.2 kV	40A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	-	50 µA @ 1.2 kV	1371pF @ 100mV, 1MHz	-	-	Through Hole	TO-247-3L	-55°C ~ 175°C
NC1D120C60GTDN SiC Schottky 1200V 60A TO247- 3L NextGen Components	300	-	RFQ	برگه مشخصات	-	TO-247-3L	Tube	Active	SiC (Silicon Carbide) Schottky	-	60A	-	-	-	-	2125pF @ 0.1V, 1MHz	-	-	Surface Mount	TO-247-3L	-55°C ~ 175°C
ADC4D10120E DIODE SIL SIC 1200V 33A TO252-2 Analog Power Inc.	2,500	-	RFQ	برگه مشخصات	WBG	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	33A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	-	2 µA @ 1200 V	6.3pF @ 0V, 100kHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
ADC4D10120H DIODE SIL SIC 1200V 31.5A TO247- Analog Power Inc.	950	-	RFQ	برگه مشخصات	WBG	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	31.5A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	-	2 µA @ 1200 V	6.3pF @ 0V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
ADE4D20120G DIODE SIL SIC 1200V 56A TO263-2 Analog Power Inc.	600	-	RFQ	برگه مشخصات	WBG	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	56A	1.85 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 1200 V	12pF @ 0V, 100kHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
ADC4D20120H DIODE SIL SIC 1200V 54A TO247-2 Analog Power Inc.	800	-	RFQ	برگه مشخصات	WBG	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	54A	1.85 V @ 20 A	No Recovery Time > 500mA (Io)	-	10 µA @ 1200 V	12pF @ 0V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C