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عکس شماره قطعه تولیدکننده موجودی قیمت تعداد برگه مشخصات سری بسته / کیس بسته بندی وضعیت محصول تکنولوژی ولتاژ - معکوس DC (Vr) (حداکثر) فعلی - میانگین اصلاح شده (Io) ولتاژ - جلو (Vf) (حداکثر) @ اگر سرعت زمان بازیابی معکوس (trr) جریان - نشت معکوس @ Vr ظرفیت @ Vr، F درجه صلاحیت نوع نصب بسته دستگاه تامین کننده دمای عملیاتی - اتصال
1N5420

1N5420

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

70
RFQ
1N5420

برگه مشخصات

- B, Axial Bulk Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N6640US

JANTX1N6640US

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

49
RFQ
JANTX1N6640US

برگه مشخصات

- SQ-MELF, D Bulk Active Standard 50 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Surface Mount D-5D -65°C ~ 175°C
MSC010SDA170B

MSC010SDA170B

DIODE SIL CARB 1.7KV 31A TO247-3

Microchip Technology

47
RFQ
MSC010SDA170B

برگه مشخصات

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 31A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1700 V 820pF @ 1V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
VS-70HFR120

VS-70HFR120

DIODE GEN PURP 1.2KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

90
RFQ
VS-70HFR120

برگه مشخصات

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
1N5802US

1N5802US

DIODE GEN PURP 50V 1A D-5A

Microchip Technology

50
RFQ
1N5802US

برگه مشخصات

- SQ-MELF, A Bulk Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
VS-71HF40

VS-71HF40

DIODE GEN PURP 400V 70A DO203AB

Vishay General Semiconductor - Diodes Division

79
RFQ
VS-71HF40

برگه مشخصات

- DO-203AB, DO-5, Stud Bulk Active Standard 400 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - 15 mA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-72HF120

VS-72HF120

DIODE GEN PURP 1.2KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

11
RFQ
VS-72HF120

برگه مشخصات

- DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
MSC050SDA070S

MSC050SDA070S

DIODE SIL CARBIDE 700V 88A D3PAK

Microchip Technology

16
RFQ
MSC050SDA070S

برگه مشخصات

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active SiC (Silicon Carbide) Schottky 700 V 88A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V 2034pF @ 1V, 1MHz - - Surface Mount D3PAK -55°C ~ 175°C
VS-85HF60

VS-85HF60

DIODE GEN PURP 600V 85A DO203AB

Vishay General Semiconductor - Diodes Division

32
RFQ
VS-85HF60

برگه مشخصات

- DO-203AB, DO-5, Stud Bulk Active Standard 600 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JANTX1N5420US

JANTX1N5420US

DIODE GEN PURP 600V 3A D-5B

Microchip Technology

49
RFQ
JANTX1N5420US

برگه مشخصات

- SQ-MELF, E Bulk Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
VS-85HFR160

VS-85HFR160

DIODE GEN PURP 1.6KV 85A DO203AB

Vishay General Semiconductor - Diodes Division

63
RFQ
VS-85HFR160

برگه مشخصات

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1600 V 85A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 150°C
50HQ045

50HQ045

DIODE SCHOTTKY 45V 60A DO5

SMC Diode Solutions

23
RFQ
50HQ045

برگه مشخصات

- DO-203AB, DO-5, Stud Box Active Schottky 45 V 60A 600 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 45 V 2600pF @ 5V, 1MHz - - Chassis, Stud Mount DO-5 -55°C ~ 150°C
MSC050SDA120B

MSC050SDA120B

DIODE SIC 1.2KV 109A TO247-2

Microchip Technology

73
RFQ
MSC050SDA120B

برگه مشخصات

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 109A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 246pF @ 400V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
VS-1N3768

VS-1N3768

DIODE GEN PURP 1KV 35A DO203AB

Vishay General Semiconductor - Diodes Division

94
RFQ
VS-1N3768

برگه مشخصات

- DO-203AB, DO-5, Stud Bulk Active Standard 1000 V 35A 1.8 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - 2 mA @ 1000 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
MSC050SDA120S

MSC050SDA120S

DIODE SIL CARB 1.2KV 50A D3PAK

Microchip Technology

85
RFQ
MSC050SDA120S

برگه مشخصات

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A - No Recovery Time > 500mA (Io) 0 ns - - - - Surface Mount D3PAK -
VS-70HF120M

VS-70HF120M

DIODE GEN PURP 1.2KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

9
RFQ
VS-70HF120M

برگه مشخصات

- DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
UES1106

UES1106

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

100
RFQ
UES1106

برگه مشخصات

- A, Axial Bulk Active Standard 400 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - - - Through Hole A, Axial -55°C ~ 150°C
1N5711UB/TR

1N5711UB/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

74
RFQ
1N5711UB/TR

برگه مشخصات

- 3-SMD, No Lead Tape & Reel (TR) Active Schottky 50 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Surface Mount UB -65°C ~ 150°C
VS-150U100D

VS-150U100D

DIODE GEN PURP 1KV 150A DO205AA

Vishay General Semiconductor - Diodes Division

38
RFQ
VS-150U100D

برگه مشخصات

- DO-205AA, DO-8, Stud Bulk Last Time Buy Standard 1000 V 150A 1.47 V @ 600 A Standard Recovery >500ns, > 200mA (Io) - 15 mA @ 1000 V - - - Chassis, Stud Mount DO-205AA (DO-8) -40°C ~ 180°C
123SPD100A

123SPD100A

DIODE SCHOTTKY 100V 120A SPD-4

SMC Diode Solutions

59
RFQ
123SPD100A

برگه مشخصات

- SPD-4 Bulk Active Schottky 100 V 120A 870 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 100 V 2400pF @ 5V, 1MHz - - Surface Mount SPD-4 -55°C ~ 175°C
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