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خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
DPF30I300PA DIODE GEN PURP 300V 30A TO220AC IXYS	28	-	RFQ	برگه مشخصات	HiPerFRED²™	TO-220-2	Tube	Active	Standard	300 V	30A	1.17 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	5 µA @ 300 V	42pF @ 150V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STTH60R04W DIODE GEN PURP 400V 60A DO247 STMicroelectronics	32	-	RFQ	برگه مشخصات	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	400 V	60A	1.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	60 µA @ 400 V	-	-	-	Through Hole	DO-247	-40°C ~ 175°C
VS-16F20 DIODE GEN PURP 200V 16A DO203AA Vishay General Semiconductor - Diodes Division	91	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
DNA30ER2200IY DIODE GEN PURP 2.2KV 30A TO262 IXYS	42	-	RFQ	برگه مشخصات	-	TO-262-2, I2PAK	Tube	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Through Hole	TO-262 (I2PAK)	-55°C ~ 175°C
VS-16F40 DIODE GEN PURP 400V 16A DO203AA Vishay General Semiconductor - Diodes Division	88	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	400 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-16FR10 DIODE GEN PURP 100V 16A DO203AA Vishay General Semiconductor - Diodes Division	31	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-1N1204A DIODE GEN PURP 400V 12A DO203AA Vishay General Semiconductor - Diodes Division	80	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	400 V	12A	1.35 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	1.5 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 200°C
VS-12F20 DIODE GEN PURP 200V 12A DO203AA Vishay General Semiconductor - Diodes Division	73	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
STTH60L06W DIODE GEN PURP 600V 60A DO247 STMicroelectronics	84	-	RFQ	برگه مشخصات	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	60A	1.55 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	105 ns	50 µA @ 600 V	-	-	-	Through Hole	DO-247	175°C (Max)
DSA1-16D DIODE AVALANCHE 1.6KV 2.3A IXYS	84	-	RFQ	برگه مشخصات	-	Radial	Box	Active	Avalanche	1600 V	2.3A	1.34 V @ 7 A	Standard Recovery >500ns, > 200mA (Io)	-	700 µA @ 1600 V	-	-	-	Through Hole	-	-40°C ~ 150°C
VS-12FR60 DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division	45	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-12F60 DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division	100	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	600 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
JANTX1N6638 DIODE GEN PURP 125V 300MA D5B Microchip Technology	80	-	RFQ	برگه مشخصات	-	D, Axial	Bulk	Active	Standard	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 125 V	-	Military	MIL-PRF-19500/578	Through Hole	D-5D	-65°C ~ 175°C
VS-25F40 DIODE GEN PURP 400V 25A DO203AA Vishay General Semiconductor - Diodes Division	69	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	400 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-1N1206A DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division	74	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	600 V	12A	1.35 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	1 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 200°C
VS-16FR60 DIODE GEN PURP 600V 16A DO203AA Vishay General Semiconductor - Diodes Division	60	-	RFQ	برگه مشخصات	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
JANTX1N5418 DIODE GEN PURP 400V 3A AXIAL Microchip Technology	75	-	RFQ	برگه مشخصات	-	B, Axial	Bulk	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
VS-1N1183R DIODE GEN PURP 50V 35A DO203AB Vishay General Semiconductor - Diodes Division	63	-	RFQ	برگه مشخصات	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	50 V	35A	1.7 V @ 110 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 50 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
TRS12A65F,S1Q DIODE SIL CARB 650V 12A TO220F Toshiba Semiconductor and Storage	40	-	RFQ	برگه مشخصات	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.6 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	44pF @ 650V, 1MHz	-	-	Through Hole	TO-220F-2L	175°C (Max)
VS-80PFR80W DIODE GP REV 800V 80A DO203AB Vishay General Semiconductor - Diodes Division	87	-	RFQ	برگه مشخصات	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	80A	1.4 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C