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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > FET، ماسفت > FET، ماسفت

FET، ماسفت

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع FET	تکنولوژی	تخلیه به ولتاژ منبع (Vdss)	جریان - تخلیه مداوم (Id) @ 25 درجه سانتی گراد	ولتاژ درایو (حداکثر Rds روشن، حداقل Rds روشن)	Rds روشن (حداکثر) @ ID، Vgs	Vgs(th) (Max) @ ID	شارژ دروازه (Qg) (حداکثر) @ Vgs	Vgs (حداکثر)	ظرفیت ورودی (Ciss) (حداکثر) @ Vds	ویژگی FET	اتلاف نیرو (حداکثر)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
SI2316BDS-T1-BE3 N-CHANNEL 30-V (D-S) MOSFET Vishay Siliconix	10,338	-	RFQ	برگه مشخصات	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	3.9A (Ta), 4.5A (Tc)	4.5V, 10V	50mOhm @ 3.9A, 10V	3V @ 250µA	9.6 nC @ 10 V	±20V	350 pF @ 15 V	-	1.25W (Ta), 1.66W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)
RF1S50N06SM9A N-CHANNEL POWER MOSFET Fairchild Semiconductor	9,898	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	22mOhm @ 50A, 10V	4V @ 250µA	150 nC @ 20 V	±20V	2020 pF @ 25 V	-	131W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263AB
ISL9N306AD3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	5,400	-	RFQ	برگه مشخصات	UltraFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	6mOhm @ 50A, 10V	3V @ 250µA	90 nC @ 10 V	±20V	3400 pF @ 15 V	-	125W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK
GSFD65R900 MOSFET, N-CH, SINGLE, 5.00A, 650 Good-Ark Semiconductor	5,000	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5A (Tc)	10V	900mOhm @ 2.5A, 10V	4V @ 250µA	13 nC @ 10 V	±30V	300 pF @ 100 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
GSFD4003 MOSFET, N-CH, SINGLE, 240.00A, 4 Good-Ark Semiconductor	5,000	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	240A (Tc)	6V, 10V	3mOhm @ 80A, 10V	3.9V @ 250µA	108 nC @ 10 V	±20V	5700 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
GSJD60R880 MOSFET, N-CH, SINGLE, 5.00A, 600 Good-Ark Semiconductor	4,995	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	5A (Tc)	10V	880mOhm @ 2.5A, 10V	4V @ 250µA	12 nC @ 10 V	±30V	304 pF @ 100 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
BUK9E1R9-40E,127 MOSFET N-CH 40V I2PAK NXP USA Inc.	2,360	-	RFQ	-	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Tj)	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
G085P02TS P-20V,-8.2A,RD(MAX)<[email protected],V Goford Semiconductor	4,480	-	RFQ	برگه مشخصات	-	8-TSSOP (0.173", 4.40mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	8.2A (Tc)	1.8V, 4.5V	8.5mOhm @ 4.2A, 4.5V	900mV @ 250µA	29 nC @ 10 V	±8V	1255 pF @ 10 V	-	1.05W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-TSSOP
SI2307BDS-T1-GE3 MOSFET P-CH 30V 2.5A SOT23-3 Vishay Siliconix	4,149	-	RFQ	برگه مشخصات	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	2.5A (Ta)	10V	78mOhm @ 3.2A, 10V	3V @ 250µA	15 nC @ 10 V	±20V	380 pF @ 15 V	-	750mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)
G300P06S P-CH,-60V,-12A,RD(MAX)<30M@-10V, Goford Semiconductor	3,391	-	RFQ	برگه مشخصات	-	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	12A (Tc)	10V	30mOhm @ 8A, 10V	3V @ 250µA	49 nC @ 10 V	±20V	2719 pF @ 30 V	-	3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
IPB034N06N3G N-CHANNEL POWER MOSFET Infineon Technologies	3,146	-	RFQ	برگه مشخصات	OptiMOS™ 3	TO-263-7, D2PAK (6 Leads + Tab)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	3.4mOhm @ 100A, 10V	4V @ 93µA	130 nC @ 10 V	±20V	11000 pF @ 30 V	-	167W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-3
FDS6681Z MOSFET P-CH 30V 20A 8SOIC UMW	3,000	-	RFQ	برگه مشخصات	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDS6570A MOSFET N-CH 20V 15A 8SOIC UMW	2,900	-	RFQ	برگه مشخصات	*	-	Cut Tape (CT)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF75631SK8 N-CHANNEL POWER MOSFET Fairchild Semiconductor	2,572	-	RFQ	برگه مشخصات	UltraFET®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.5A (Ta)	10V	39mOhm @ 5.5A, 10V	4V @ 250µA	79 nC @ 20 V	±20V	1225 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC
IRFR5505TR MOSFET P-CH 55V 18A DPAK UMW	2,500	-	RFQ	برگه مشخصات	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTD4804NT4G MOSFET N-CH 30V 124A DPAK UMW	2,500	-	RFQ	برگه مشخصات	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPD30P06PG MOSFET P-CH 60V 30A DPAK UMW	2,490	-	RFQ	برگه مشخصات	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RF1S45N06LESM9A N-CHANNEL POWER MOSFET Harris Corporation	1,600	-	RFQ	برگه مشخصات	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI3442BDV-T1-BE3 N-CHANNEL 2.5-V (G-S) MOSFET Vishay Siliconix	1,507	-	RFQ	برگه مشخصات	-	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	3A (Ta)	2.5V, 4.5V	57mOhm @ 4A, 4.5V	1.8V @ 250µA	5 nC @ 4.5 V	±12V	295 pF @ 10 V	-	860mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP
G40P03K P-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Goford Semiconductor	1,375	-	RFQ	برگه مشخصات	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	40A (Tc)	4.5V, 10V	10mOhm @ 15A, 10V	2.5V @ 250µA	50 nC @ 10 V	±20V	2622 pF @ 15 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252