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خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
C6D06065E-TR SIC, SCHOTTKY DIODE, 6A, 650V, T Wolfspeed, Inc.	2,453	-	RFQ	برگه مشخصات	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	394pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
C3D06065E-TR DIODE SIL CARB 650V 20A TO252-2 Wolfspeed, Inc.	2,397	-	RFQ	برگه مشخصات	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	295pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
SDS065J016C3-ISATH DIODE 650V-16A TO220-2L Luminus Devices Inc.	200	-	RFQ	برگه مشخصات	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	44A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	48 µA @ 650 V	837pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
SDS065J008S3-ISBRH DIODE 650V-8A DFN8*8-4L Luminus Devices Inc.	200	-	RFQ	برگه مشخصات	Sanan DFN8	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	29A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	395pF @ 0V, 1MHz	-	-	Surface Mount	4-DFN (8x8)	-55°C ~ 175°C
BSDD05G120E2 DIODE SCHOT SIC 1200V 5A TO252 Bourns Inc.	4,994	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 1200 V	260pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
PSC1065HJ DIODE SIL CARB 650V 10A TO252 Nexperia USA Inc.	2,065	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	36pF @ 400V, 1MHz	-	-	Surface Mount	TO-252-2	175°C
PSC0665KQ SIC DIODES AND FETS Nexperia USA Inc.	1,000	-	RFQ	برگه مشخصات	-	TO-220-2	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	225pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
RFNL20TJ6SFHGC9 SUPER FAST RECOVERY DIODE : RFNL Rohm Semiconductor	990	-	RFQ	برگه مشخصات	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	10 nA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
TSCDT08065G1 DIODE SCHOTTKY 650V 8A TO220AC Taiwan Semiconductor Corporation	995	-	RFQ	-	-	TO-220-2	Tube	Active	Schottky	650 V	8A	1.45 V @ 8 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	39pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-35EPF06L-M3 DIODE GEN PURP 600V 35A TO247AD Vishay General Semiconductor - Diodes Division	496	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	600 V	35A	1.46 V @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
IDWD40E120D7XKSA1 DIODE GEN PURP 1200V 67A TO247-2 Infineon Technologies	210	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	1200 V	67A	3 V @ 40 A	Fast Recovery =< 500ns, > 5A (Io)	155 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
SDS120J005D3-ISARH DIODE 1200V-5A TO252-2L Luminus Devices Inc.	200	-	RFQ	برگه مشخصات	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	22A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	400pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
TSCDF08065G1 DIODE SCHOTTKY 650V 8A ITO220AC Taiwan Semiconductor Corporation	973	-	RFQ	-	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	8A	1.45 V @ 8 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	39pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
S3D15065D1 SILICON CARBIDE DIODE 650V, 15A, SMC Diode Solutions	300	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	42A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 650 V	1243pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
MURBF1660C-TP RECTIFIERS Micro Commercial Co	3,000	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	16A	1.3 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	20pF @ 600V, 1MHz	-	-	Surface Mount	TO-263AC	-55°C ~ 175°C
BSDH10S65E6 DIODE SCHOT SIC 650V 10A TO220-2 Bourns Inc.	2,966	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-65APS16L-M3 DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division	495	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	Standard	1600 V	65A	1.17 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
IDWD30E65E7XKSA1 HOME APPLIANCES 14 Infineon Technologies	193	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	650 V	50A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	82 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-
SE30124HM3/I 30A,1200V,DO-218AB RECTIFIER Vishay	3,000	-	RFQ	برگه مشخصات	-	DO-218AB	Tape & Reel (TR)	Active	Standard	1200 V	4.2A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	35pF @ 400V, 1MHz	Automotive	AEC-Q101	Surface Mount	DO-218AB	-55°C ~ 175°C
PGR6016PT_T0_00301 STANDARD REVERSE RECOVERY POWER Panjit International Inc.	1,500	-	RFQ	برگه مشخصات	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-