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خانه > محصولات > محصولات نیمه هادی گسسته > دیودها > یکسو کننده ها > دیودهای تک

دیودهای تک

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	تکنولوژی	ولتاژ - معکوس DC (Vr) (حداکثر)	فعلی - میانگین اصلاح شده (Io)	ولتاژ - جلو (Vf) (حداکثر) @ اگر	سرعت	زمان بازیابی معکوس (trr)	جریان - نشت معکوس @ Vr	ظرفیت @ Vr، F	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده	دمای عملیاتی - اتصال
IDWD120E65E7XKSA1 DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies	210	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	650 V	150A	2.1 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	98 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
VS-65EPS16L-M3 DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division	184	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	1600 V	65A	1.17 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
C6D08065E-TR SIC, SCHOTTKY DIODE, 8A, 650V, T Wolfspeed, Inc.	2,370	-	RFQ	برگه مشخصات	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	29A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
C6D08065G-TR SIC, SCHOTTKY DIODE, 8A, 650V, T Wolfspeed, Inc.	2,300	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.4 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
C3D08065E-TR DIODE SIL CARB 650V 25.5A TO252 Wolfspeed, Inc.	2,190	-	RFQ	برگه مشخصات	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	25.5A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	395pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
STPSC12065D DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	749	-	RFQ	برگه مشخصات	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
SDS120J010D3-ISARH DIODE 1200V-10A TO252-2L Luminus Devices Inc.	200	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	37A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
BSDD10S65E6 DIODE SCHOT SIC 650V 10A TO252 Bourns Inc.	4,995	-	RFQ	برگه مشخصات	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
BSDB10S65E6 DIODE SCHOT SIC 650V 10A TO263 Bourns Inc.	3,170	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
BSDL10S65E6 DIODE SIC SCHTKY 650V 10A DFN8X8 Bourns Inc.	2,697	-	RFQ	برگه مشخصات	-	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
FFSM1265A DIODE SIL CARB 650V 12.5A 4PQFN onsemi	2,585	-	RFQ	برگه مشخصات	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12.5A	1.75 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	665pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
PSC1065KQ PSC1065K/SOT8021/TO220-2L Nexperia USA Inc.	974	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	340pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	175°C
IDWD60E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	187	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	650 V	100A	2.1 V @ 60 A	Fast Recovery =< 500ns, > 5A (Io)	99 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD75E120D7XKSA1 DIODE GEN PURP 1200V 116A TO247 Infineon Technologies	235	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	1200 V	116A	3 V @ 75 A	Fast Recovery =< 500ns, > 5A (Io)	195 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
VS-3C05ET12S2L-M3 5A 1200V SIC ZERO QRR SINGLE TJM Vishay General Semiconductor - Diodes Division	796	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	-	30 µA @ 1200 V	20pF @ 800V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
IDWD75E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	210	-	RFQ	برگه مشخصات	-	TO-247-2	Tube	Active	Standard	650 V	100A	2.1 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	97 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
SDS065J012S3-ISARH DIODE 650V-12A DFN8*8-4L Luminus Devices Inc.	200	-	RFQ	برگه مشخصات	Sanan DFN8	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	44A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	651pF @ 0V, 1MHz	-	-	Surface Mount	4-DFN (8x8)	-55°C ~ 175°C
PCDP0865GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	RFQ	برگه مشخصات	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
APT60D120SG DIODE GEN PURP 1.2KV 60A D3 Microchip Technology	156	-	RFQ	برگه مشخصات	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	250 µA @ 1200 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
FFSB2065B DIODE SIL CARB 650V 22.8A D2PAK onsemi	2,178	-	RFQ	برگه مشخصات	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	22.8A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C