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خانه > محصولات > محصولات نیمه هادی گسسته > ترانزیستورها > IGBT ها > IGBT های منفرد

IGBT های منفرد

شماره قطعه تولیدکننده	موجودی	قیمت	تعداد	برگه مشخصات	سری	بسته / کیس	بسته بندی	وضعیت محصول	نوع IGBT	ولتاژ - خرابی امیتر کلکتور (حداکثر)	فعلی - گردآورنده (IC) (حداکثر)	جریان - پالس جمع کننده (Icm)	Vce(on) (Max) @ Vge، Ic	قدرت - حداکثر	انرژی سوئیچینگ	نوع ورودی	شارژ دروازه	Td (روشن/خاموش) @ 25 درجه سانتی گراد	شرایط تست	زمان بازیابی معکوس (trr)	دمای عملیاتی	درجه	صلاحیت	نوع نصب	بسته دستگاه تامین کننده
APT40GP60BG IGBT PT 600V 100A TO247 Microchip Technology	9,603	-	RFQ	برگه مشخصات	POWER MOS 7®	TO-247-3	Tube	Active	PT	600 V	100 A	160 A	2.7V @ 15V, 40A	543 W	385µJ (on), 352µJ (off)	Standard	135 nC	20ns/64ns	400V, 40A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
APT40GP60B2DQ2G IGBT PT 600V 100A Microchip Technology	8,713	-	RFQ	برگه مشخصات	POWER MOS 7®	TO-247-3 Variant	Tube	Active	PT	600 V	100 A	160 A	2.7V @ 15V, 40A	543 W	385µJ (on), 350µJ (off)	Standard	135 nC	20ns/64ns	400V, 40A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	-
APT70GR120L IGBT NPT 1200V 160A TO264 Microchip Technology	4,755	-	RFQ	برگه مشخصات	-	TO-264-3, TO-264AA	Tube	Active	NPT	1200 V	160 A	280 A	3.2V @ 15V, 70A	961 W	3.82mJ (on), 2.58mJ (off)	Standard	544 nC	33ns/278ns	600V, 70A, 4.3Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264
APT70GR120B2 IGBT NPT 1200V 160A TO247 Microchip Technology	3,639	-	RFQ	برگه مشخصات	-	TO-247-3	Tube	Active	NPT	1200 V	160 A	280 A	3.2V @ 15V, 70A	961 W	3.82mJ (on), 2.58mJ (off)	Standard	544 nC	33ns/278ns	600V, 70A, 4.3Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
IXXX140N65B4H1 IGBT IXYS	9,932	-	RFQ	برگه مشخصات	XPT™, GenX4™	TO-247-3 Variant	Tube	Active	-	650 V	340 A	840 A	1.9V @ 15V, 120A	1200 W	5.75mJ (on), 2.67mJ (off)	Standard	250 nC	54ns/270ns	400V, 100A, 4.7Ohm, 15V	105 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	PLUS247™-3
IXYX100N65B3D1 IGBT PT 650V 225A PLUS247-3 IXYS	4,742	-	RFQ	برگه مشخصات	GenX3™, XPT™	TO-247-3 Variant	Tube	Obsolete	PT	650 V	225 A	460 A	1.85V @ 15V, 70A	830 W	1.27mJ (on), 1.37mJ (off)	Standard	168 nC	29ns/150ns	400V, 50A, 3Ohm, 15V	156 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	PLUS247™-3
IXXK200N60B3 IGBT 600V 380A 1630W TO264 IXYS	7,913	-	RFQ	برگه مشخصات	GenX3™, XPT™	TO-264-3, TO-264AA	Tube	Active	PT	600 V	380 A	900 A	1.7V @ 15V, 100A	1630 W	2.85mJ (on), 2.9mJ (off)	Standard	315 nC	48ns/160ns	360V, 100A, 1Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264 (IXXK)
IXBT2N250-TR IGBT 2500V 5A TO268 IXYS	7,342	-	RFQ	-	BIMOSFET™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	-	2500 V	5 A	13 A	3.5V @ 15V, 2A	32 W	-	Standard	10.6 nC	30ns/70ns	2000V, 2A, 47Ohm, 15V	920 ns	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268
IXBT42N170-TRL IGBT 1700V 80A TO268 IXYS	2,970	-	RFQ	-	BIMOSFET™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	-	1700 V	80 A	300 A	2.8V @ 15V, 42A	360 W	-	Standard	188 nC	37ns/340ns	850V, 42A, 10Ohm, 15V	-	-	-	-	Surface Mount	TO-268
APT50GP60B2DQ2G IGBT PT 600V 150A Microchip Technology	6,824	-	RFQ	برگه مشخصات	POWER MOS 7®	TO-247-3 Variant	Tube	Active	PT	600 V	150 A	190 A	2.7V @ 15V, 50A	625 W	465µJ (on), 635µJ (off)	Standard	165 nC	19ns/85ns	400V, 50A, 4.3Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	-
IXYK30N170CV1 DISC IGBT XPT-HI VOLTAGE TO-264( IXYS	7,212	-	RFQ	برگه مشخصات	XPT™	TO-264-3, TO-264AA	Tube	Active	PT	1700 V	100 A	250 A	4V @ 15V, 30A	937 W	3.6mJ (on), 1.8mJ (off)	Standard	150 nC	16ns/143ns	850V, 30A, 2.7Ohm, 15V	33 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264 (IXYK)
IXGX50N60AU1 IGBT 600V 75A 300W TO247 IXYS	5,589	-	RFQ	-	HiPerFAST™	TO-247-3	Tube	Obsolete	-	600 V	75 A	200 A	2.7V @ 15V, 50A	300 W	4.8mJ (off)	Standard	200 nC	50ns/200ns	480V, 50A, 2.7Ohm, 15V	50 ns	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD
IXBT24N170 IGBT 1700V 60A TO268AA IXYS	4,307	-	RFQ	برگه مشخصات	BIMOSFET™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	-	1700 V	60 A	230 A	2.5V @ 15V, 24A	250 W	-	Standard	140 nC	-	-	1.06 µs	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
IXGX55N120A3H1 IGBT 1200V 125A 460W PLUS247 IXYS	2,769	-	RFQ	برگه مشخصات	GenX3™	TO-247-3 Variant	Tube	Active	PT	1200 V	125 A	400 A	2.3V @ 15V, 55A	460 W	5.1mJ (on), 13.3mJ (off)	Standard	185 nC	23ns/365ns	960V, 55A, 3Ohm, 15V	200 ns	-	-	-	Through Hole	PLUS247™-3
APT50GS60BRDQ2G IGBT NPT 600V 93A TO247 Microchip Technology	6,927	-	RFQ	برگه مشخصات	Thunderbolt IGBT®	TO-247-3	Tube	Active	NPT	600 V	93 A	195 A	3.15V @ 15V, 50A	415 W	755µJ (off)	Standard	235 nC	16ns/225ns	400V, 40A, 4.7Ohm, 15V	25 ns	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
APT102GA60L IGBT PT 600V 183A TO264 Microchip Technology	8,325	-	RFQ	-	-	TO-264-3, TO-264AA	Tube	Active	PT	600 V	183 A	307 A	2.5V @ 15V, 62A	780 W	1.354mJ (on), 1.614mJ (off)	Standard	294 nC	28ns/212ns	400V, 62A, 4.7Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
APT102GA60B2 IGBT 600V 183A 780W TO247 Microchip Technology	2,847	-	RFQ	-	POWER MOS 8™	TO-247-3 Variant	Tube	Obsolete	PT	600 V	183 A	307 A	2.5V @ 15V, 62A	780 W	1.354mJ (on), 1.614mJ (off)	Standard	294 nC	28ns/212ns	400V, 62A, 4.7Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	-
APT80GA90LD40 IGBT PT 900V 145A TO264 Microchip Technology	3,262	-	RFQ	برگه مشخصات	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	PT	900 V	145 A	239 A	3.1V @ 15V, 47A	625 W	1652µJ (on), 1389µJ (off)	Standard	200 nC	18ns/149ns	600V, 47A, 4.7Ohm, 15V	25 ns	-	-	-	Through Hole	TO-264
IGC70T120T8RQ IGBT 1200V 75A DIE Infineon Technologies	5,766	-	RFQ	برگه مشخصات	-	Die	Bulk	Discontinued	Trench Field Stop	1200 V	-	225 A	2.42V @ 15V, 75A	-	-	Standard	-	-	-	-	-	-	-	Surface Mount	Die
IXGR24N120C3D1 IGBT 1200V 48A 200W ISOPLUS247 IXYS	9,046	-	RFQ	برگه مشخصات	GenX3™	TO-247-3	Tube	Active	PT	1200 V	48 A	96 A	4.2V @ 15V, 20A	200 W	1.37mJ (on), 470µJ (off)	Standard	79 nC	16ns/93ns	600V, 20A, 5Ohm, 15V	220 ns	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™